Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Effects of abrasive size distribution in chemical mechanical planarization: Modeling and verification

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling

Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution,and Wafer-Pad Contact Area

Mechanical Model of Nanoparticles for Material Removal in Chemical Mechanical Polishing Process

Chemical mechanical polishing: Theory and experiment

Modeling the Chemical-Mechanical Synergy During Copper CMP

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

A Chemical Mechanical Polishing Model Based on the Viscous Flow of the Amorphous Layer

Material Removal Regions in Chemical Mechanical Polishing: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, Part 1

A Theoretical Model Incorporating Both the Nano-Scale Material Removal and Wafer Global Uniformity During Planarization Process

Analysis on Pad Effects in Chemical Mechanical Polishing

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Research Progress of Material Removal Mechanism in Chemical Mechanical Planarization for Metal Interconnection Layer of Chips

Abrasive Rolling Effects On Material Removal And Surface Finish In Chemical Mechanical Polishing Analyzed By Molecular Dynamics Simulation

Review on modeling and application of chemical mechanical polishing

Optimization of CMP from the Viewpoint of Consumable Effects

Modeling and Experimental Analysis of the Material Removal Rate in the Chemical Mechanical Planarization of Dielectric Films and Bare Silicon Wafers

Non-continuum Material Removal Mechanism of Surface Polishing with Ultra Precision