Abstract:Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core-shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core-shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core-shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag-Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. This study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

Low-temperature Au-induced crystallization of hydrogenated amorphous Si0.5Ge0.5 thin films using Au solution

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Effect of oxide layer on Al-induced crystallization of amorphous Si1−xGex thin films

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

CRYSTALLIZATION OF AMORPHOUS Ge IN Ge/Au, Ge/Ag BILAYER FILMS AND Ge-Au, Ge-Ag ALLOY FILMS

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Influence of Post-Annealing Treatment on the Morphology of Au Films Deposited on Liquid Surfaces

In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Ni Induced Crystallization of Amorphous SiGe

Crystallization of As-Deposited Amorphous Silicon Films on Glass Prepared by Magnetron Sputtering with Different Substrate Biases and Temperatures

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

The Alloying Effects of Ge and Si on Thermal Stability and Crystallization Behavior of Al-Y Binary Amorphous Alloys

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer