Abstract:A broadband LNA was presented based on improved negative feedback design.The LNA chip was designed with 0.25 μm GaAs pHEMT technology and packaged in SiP package technique.With the adjustment of the negative feedback circuit around the chip inside the package, the LNA achieved planarized gain and an optimized operating bandwidth from 0.5 GHz to 2.5 GHz,which covered several application bands including GSM, TD-SCDMA, WCDMA and GPS. To guarantee the excellent performance in severe environments,an active biasing was used inside the chip.As results,effective compensations for the fluctuation of the supply voltage and the temperature variation were achieved.It is tested that the broadband LNA shows superior performances within 0.5 GHz to 2.5 GHz,including gain of about 14 dB,gain flatness of less than 1dB,and noise figure of less than 1.3 dB.Test results also show that the input and output return loss is less than -10 dB,the input third-order intercept point is much greater than 1 dBm,and the DC power consumption is 40 mW at 3.3 V supply voltage.The packaged size of this broadband LNA is 3 mm×3 mm×1 mm.

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