Abstract:Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×10 4 cm 2 ·V -1 ·s -1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×10 11 cm -2 . The effective mass of the two-dimensional electron gas is approximately 0.19 m 0 . The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Sputtered SiO<sub>2</sub> Induced Atomic Interdiffusion in Semiconductor Nano Heterostructures

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Photonic-integrated circuits and components using quantum well intermixing

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Photonic integrated circuits fabricated using quantum well intermixing

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

GaInAs/GaAs quantum well intermixing based on SiO2–Cu composite film

SILICA CAPPING FOR AL0.3GA0.7AS/GAAS AND IN0.2GA0.8AS/GAAS QUANTUM WELL INTERMIXING

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavity

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Epitaxy and characterization of undoped Si/SiGe heterojunctions

Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics