Abstract:In this work, quantum ballistic transport study of a Si double-gate pMOSFET has been carried out in an ultra-thin structure. The simulation is performed by using non-equilibrium Green's function (NEGF) solver that incorporates six band k . p model. Based on this framework, we analyze the device characteristics for a channel length of 5 nm considering different transport directions, confinement directions and channel thickness. In the on and off state of the device several physical parameters are necessary for performance analysis including threshold voltage, subthreshold slope, on/off current ratio. Our results confirm that for 5nm gate length, best electrical performance is obtained at (001)/[100] crystal orientation. It is observed that better ON current, subthreshold swing and lower value of tunneling ratio can be achieved by optimizing the channel thicknesses and selecting the proper crystallographic orientation for the device. The I-ON/I-OFF ratio is also calculated for both high performance and low operating power applications. We find that large channel thickness leads to worse sub-threshold slope due to the stronger source-to-drain tunneling caused by electrostatics degradation. The potential barrier and spectral current density are also presented in order to find the source-to-drain tunneling and ratio for different crystal orientations and body thickness.

Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions

A Continuous Analytic Channel Potential Solution to Doped Symmetric Double-Gate MOSFETs from the Accumulation to the Strong-Inversion Region

A global continuous channel potential solution for double-gate MOSFETs

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

A Closed-Form Model for Position-Dependent Potential Across the Channel in DG-MOSFETs

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Continuous Surface Potential versus Voltage Equation of Undoped Surrounding-Gate MOSFETs and Its Solution

Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Analytic channel potential solution to the undoped surrounding-gate MOSFETs

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

An analytic channel potential based model for dynamic depletion surrounding-gate mosfets with arbitrary doping level

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body