Platinum Thin Film Temperature Detector with High Resistance Temperature Coefficient and Stability for High Temperature Detection
Weiming Lv,Junpeng Li,Ruifang Zhong,Rong Huang,Shujun Li,Desheng Zhao,Wenhua Shi,Yiqun Wang,Baoshun Zhang,Zhongming Zeng,Yaming Fan
DOI: https://doi.org/10.2139/ssrn.4332322
2023-01-01
Abstract:Platinum thin film resistance temperature sensor (Pt RTD) is widely used in extreme environment because of its high thermal stability. At present, extensive research has been carried out based on Pt film growth process and resistance temperature coefficient (TCR). However, the microstructure, electrical properties and TCR stability of Pt RTD in high temperature environment remain largely unexplored. In this work, we systematically study the key factors affecting TCR of the Pt RTD, prepared by MEMS process on Al2O3 ceramic and sapphire substrates. We study the influences of film thickness, annealing temperature and different substrates on the microstructure and electrical properties of Pt RTD, focusing on the influence of high temperature environmental impact on the TCR stability of Pt RTD on sapphire substrate. The results show that the increase of the film thickness and the annealing temperature, as well as the smaller surface roughness of the sapphire substrate can effectively improve the TCR of the Pt RTD. The TCR of Pt RTD remains above 3409 ppm/°C when the film thickness is 500 nm, the surface roughness of sapphire substrate is less than 0.5 nm, and the annealing temperature is 1100 °C for 6 hours, showing good stability.