Abstract:N-type hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by the plasma-enhanced chemical vapour deposition (PECVD) technique on p+-type crystal silicon (c-Si) substrates; then a kind of heterojunction structure of (n)nc-Si:H/(p+)c-Si was obtained. Both negative resistance in forward current–voltage (I–V) measurements and current staircases in reverse I–V experimental curves were observed from this heterojunction of (n)nc-Si:H/(p+)c-Si at 77 K. It was verified by the electrical experiments that this structure is a semiconductor heterojunction tunnelling diode. The forward current was considered to be dominated by interband tunnelling, excess and thermionic emission component. Within the reverse bias ranging from around 0 to −13 V, the reverse leakage current can be attributed to minority carriers instead of majority carriers tunnelling across the depletion layer of the heterojunction. By increasing the reverse applied voltage from about −13 V to −37 V, the reverse current can be ascribed to the injection of electrons via sequent resonant tunnelling through the Si nanocrystals quantum dots into the substrate. By further increasing the reverse bias, the reverse current can be assigned to carrier avalanche multiplication within the amorphous buffer layer in the depletion region to enhance the electron resonant tunnelling in the nc-Si:H layer. The results indicate that the (n)nc-Si:H/(p+)c-Si structure is a promising candidate for digital circuit applications.

Observation of Periodical Negative Differential Conductivity in Nanocrystalline Silicon/crystalline Silicon Heterostructures

Quantum Tunneling Behavior Of Nanocrystalline Silicon/Crystalline Silicon Heterostructure Diode

Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Observation of Low-Dimensional State Tunneling in Nanocrystalline Silicon∕crystalline Silicon Heterostructures

Resonant Tunneling Characteristics in Crystalline Silicon/Nanocrystalline Silicon Heterostructure Diodes

Observation of Negative Differential Resistance in SiO2/Si Heterostructures

Negative Differential Resistance Behavior of Silicon Monatomic Chain Encapsulated in Carbon Nanotubes

A Study of Electrical Properties on Nc-Si/c-si Heterojunction Diodes

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Band Offsets and Transport Mechanisms of Hydrogenated Nanocrystalline Silicon/Crystalline Silicon Heterojunction Diode: Key Properties for Device Applications

Negative Differential Resistance in Single-Walled SiC Nanotubes

Photocurrent of Hydrogenated Nanocrystalline Silicon Thin Film/crystalline Silicon Heterostructure

Conduction Behaviour of Hydrogenated Nanocrystalline Silicon Backward Diode

Electronic Characteristics of N-Type Nanocrystalline/p-Type Crystalline Silicon Heterostructure

Electrical Characterization of N-nanocrystalline/P-crystalline Silicon Heterojunctions

Investigation on High Mobility Nanocrystalline Si with Crystalline Si Heterostructure

Current Conduction in Al/Si Nanocrystal Embedded Sio2/P-Si Diodes with Various Distributions of Si Nanocrystals in the Oxide

Transition of dominative conduction mechanism caused by nanostructures on silicon surface

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon