Abstract:We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.

Observation of Low-Dimensional State Tunneling in Nanocrystalline Silicon∕crystalline Silicon Heterostructures

Observation of in-gap states in a two-dimensional CrI2/NbSe2 heterostructure

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Vortex Crossing, Trapping and Pinning in Superconducting Nanowires of a NbSe_2 Two-Dimensional Crystal

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Interband Tunneling in 2D Crystal Semiconductors

Transport in a Two-Channel Nanotransistor Device with Lateral Resonant Tunneling

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Andreev Reflection Enhanced Single Hole Tunneling in Ge/Si Core/shell Nanowire Quantum Dot

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Resonant 2D-2D tunneling with account for spin-orbit interaction

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Observation of Yu-Shiba-Rusinov-like states at the edge of CrBr3/NbSe2 heterostructure

Andreev Tunneling Enhanced by Coulomb Oscillations in Superconductor-Semiconductor Hybrid Ge/Si Nanowire Devices

Observation of Dimension-Crossover of a Tunable 1D Dirac Fermion in Topological Semimetal NbSi$_x$Te$_2$

Transport Mechanism of Nanocrystalline-Silicon Film Tunnelling Diodes

Observation of One-Dimensional Dirac Fermions in Silicon Nanoribbons

Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets.

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells