The Influence of Distribution of Na+-Dopant on the Structure and Dielectric Properties of Ba0.25sr0.75tio3 Thin Film

Zhou Qi-Gang,Zhai Ji-Wei,Yao Xi
DOI: https://doi.org/10.7498/aps.56.6666
IF: 0.906
2007-01-01
Acta Physica Sinica
Abstract:Na+-doped and compositional graded doped Ba0.25Sr0.75TiO3 thin films were grown on Pt/Ti/SiO2/Si substrates by Sol-Gel technique. The dielectric properties of thin films were investigated as a function of Na+ doping level. It is revealed that with the increase of Na+ concentrations both the dielectric constant and the loss decrease continuously while the leakage current initially decreases (Na+< 2.5mol%) and then increases. The increase of leakage current may be caused by the formation of porous structure which was confirmed by field emission scanning microscopy (FE-SEM). The improvement of overall dielectric properties were achieved by using the compositional graded doping which results in a better microstructure in the film.
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