RESERCH DEVELOPMENT OF Cu(In_xGa_(1-x))Se_2 THIN FILM SOLAR CELL ABSORBER MATERIAL

Tian Jing,Chen Jinwei,Yang Xin,Wang Gang,Wang Xueqin,Wang Ruilin

2012-01-01

Abstract:The structure of the Cu(InxGa1-x)Se2(CIGS)thin film solar cell is introduced.The main preparation process,present research status and developing trend of the CIGS thin film are summarized.The present problem and development direction in the future are pointed out in the paper.

What problem does this paper attempt to address?

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Hui-qun CAO,Xin-peng ZHANG,Xian-ping FAN,Ju-guang HU,Zhong-kuan LUO,Jian-hong LIU

DOI: https://doi.org/10.3724/SP.J.1249.2012.03247

2012-01-01

JOURNAL OF SHENZHEN UNIVERSITY SCIENCE AND ENGINEERING

Abstract:The structure of CIGS thin film solar cells and new research results in their absorption layer fabrications were described.The vacuum and non-vacuum preparation techniques were compared and non-vacuum preparation techniques has the advantages on printing speed,low cost and mass production.CIGS nanocrystals with small and uniform size synthesized are the key technology for the non-vacuum preparation method.We reviewed the research development on various synthesize of CIGS nanomaterials including low temperature sol-gel,microwave,solvothermal,hot injection,gas reduction,and chemical deposition process etc.,and the advantages and disadvantages of various methods at the end of the paper.The suggestions and views on further study of CIGS nanoparticles were also presented.
Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Huiqun Cao,Xinpeng Zhang,Xianping Fan,Juguang Hu,Zhongkuan Luo,Jianhong Liu

DOI: https://doi.org/10.3724/SP.J.1249.2012.03247

2012-01-01

Shenzhen Daxue Xuebao (Ligong Ban)/Journal of Shenzhen University Science and Engineering

Abstract:The structure of CIGS thin film solar cells and new research results in their absorption layer fabrications were described. The vacuum and non-vacuum preparation techniques were compared and non-vacuum preparation techniques has the advantages on printing speed, low cost and mass production. CIGS nanocrystals with small and uniform size synthesized are the key technology for the non-vacuum preparation method. We reviewed the research development on various synthesize of CIGS nanomaterials including low temperature sol-gel, microwave, solvothermal, hot injection, gas reduction, and chemical deposition process etc., and the advantages and disadvantages of various methods at the end of the paper. The suggestions and views on further study of CIGS nanoparticles were also presented.
Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

F. Kang,J. P. Ao,G. Z. Sun,Q. He,Y. Sun

DOI: https://doi.org/10.1088/0268-1242/24/7/075015

IF: 2.048

2009-01-01

Semiconductor Science and Technology

Abstract:This paper presents our studies on the preparation and properties of CuInxGa1-xSe2 (CIGS) thin-film solar cell absorbers grown from Ga-rich electrodeposited precursors followed by their selenization. X-ray fluorescence and scanning electron microscopy results show that the deposition potential of -0.7 V is suitable for obtaining a smooth CIGS precursor film with inclusion of more gallium (x = 0.4). X-ray diffraction studies reveal that a stoichiometric CuIn0.7Ga0.3Se2 phase that can be formed by selenization of the Ga-rich precursor is ascribed to a high Se vapor pressure. An optical study shows that the band-gap energy of the stoichiometric CIGS sample is 1.17 eV. The best photovoltaic devices showed a conversion efficiency of 2.0 +/- 0.5%.
Research Development of Cu(In,Ga)Se_2 Based(cigs) Solar Cells

Youwei Du

2012-01-01

Abstract:Cu(In,Ga)Se2 based(CIGS) solar cells become the most promising solar cells with many virtues.With the renovation of the record efficiency of CIGS thin film solar cells,the research focus changed accordingly,including the development of CIGS solar cells with higher efficiency,the barrier lays without Cd,the flexible CIGS solar cells and modules,the new and low-cost processes for CIGS thin films,and the commercial manufacturing.The current research progress of CIGS thin film solar cells was introduced in this paper.
State-of-arts and Application Prospect of Thin Film Solar Cells Based on Cu(In,Ga)Se2

庄大明,张弓

DOI: https://doi.org/10.3969/j.issn.1002-0322.2004.02.001

IF: 4

2004-01-01

Vacuum

Abstract:The constructions and performance characteristics of thin film solar cells based on Cu(In,Ga)Se_2 are introduced as well as their fabrications and technological prcesses. The emphasis is laid on the new advancements and development tendency of the thin film solar cells in developed industrial countries and relevant companies, especially on their highest photoelectric conversion efficiencies of laboratory samples and products of solar cells. A brief description of current RD situation in China on CIGS solar cell is also given, with the industrialized feasibility and prospect of production of thin film solar cells based on Cu(In,Ga)Se_2 in China discussed.
Electrodeposition of CuInSe_2 and Cu(In,Ga)Se_2 Thin Films for Solar Cells

Yexiang Liu

2009-01-01

Abstract:The research progress in electrodeposition of CuInSe2 (CIS) and Cu(In,Ga)Se2 (CIGS) thin films for solar cells is reviewed.The development of electrodeposition of CIS and CIGS precursor,including one-step electrodeposition,multi-step electrodeposition,special electrodeposition is reviewed in detail.The research on post treatment of precursor,including thermal annealing,chemical treatments,and composition adjustment by PVD is also summarized.The efficiencies progress of CIS and CIGS solar cell based on electrodeposition technology,and the latest results of laboratory and industrialization research are presented.At last,the key problem is pointed out and the future development tendency is prospected.
Progress in Research on CuInS2 Material for Solar Cell

汤会香,严密,张辉,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2002.08.010

2002-01-01

Abstract:This paper outlines the progress in research on CuInS2 material for solar cells.The structural character,the optical properties and the electrical properties of CuInS2 material are introduced.Furthermore,the effect of doping on the properties in discussed.Finally,some existing problems and future directions are suggested.
Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Pan Hui-Ping,Bo Lian-Kun,Huang Tai-Wu,Zhang Yi,Yu Tao,Yao Shu-De

DOI: https://doi.org/10.7498/aps.61.228801

IF: 0.906

2012-01-01

Acta Physica Sinica

Abstract:In this paper, the complex structure of CuInGaSe (CIGS), which is fabricated by a two-step progress (the deposition step and the salinization) or co-evaporation method, is analyzed in detail by several methods. Rutherford backscattering spectroscopy (RBS) shows unique advantage for investigating CIGS multi-layer. For the two-step CIGS thin films, both Ga and In atoms reveal a gradient distribution. Such a distribution that Ga atoms are more likely to be localized in a deeper layer of surface than in a shallow layer of surface, has no relation with the Mo layer. RBS and Auger electron spectroscopy (AES) prove that there appears diffusion in the interfaces of multi-layers, especially the interfaces of CdS and CIGS, Mo and CIGS. X-ray fluorescence (XRF) indicates that CIGS thin film presents the highest efficiency when the content ratio of In and Ga atoms is 0.7:0.3. Structural investigation by X-ray diffraction reveals the improved crystalline quality after annealing.
Synthesis and Characterization of CIGS Powder

Cao Huiqun,Zhang Shejie,Fan Xianping,Hu Juguang,Zhang Yiqian,Luo Zhongkuan

2012-01-01

Rare Metal Materials and Engineering

Abstract:CuInGaSe2(CIGS), which belongs to the family of semiconducting materials of the tetragonal chalcopyrite structure, has emerged as a leading material for high efficiency and radiation-hard solar cell application. The CIGS powder was synthesized by a relatively simple and convenient solvothermal synthesis method. X-ray powder diffraction (XRD) was adopted for the characterization of the as-synthesized powder. It was concluded that the powder has different component with the reactive temperature changing. It contained CIGS and other phases when it was synthesized at 150 degrees C. When the reactive temperature increased to 180 degrees C, the major product was CuGaSe2 and Ga2Se3, the major product contained CuGa0.3In0.7Se2 and Cu2Se4 when the reactive temperature was 200 degrees C, and the single phase CIGS were obtained at 230 degrees C. The as-synthesized powder was characterized by SEM and ICP. SEM results showed that the size of 100 similar to 500 nm crystal was formed when the reactive temperature was 230 degrees C. ICP results indicated that the composing of crystal was CuIn0.43Ga0.28Se1.65.
Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Jiang Liu,Da-ming Zhuang,Ming-jie Cao,Xiao-long Li,Min Xie,Da-wei Xu

DOI: https://doi.org/10.1016/j.vacuum.2013.10.007

IF: 4

2014-01-01

Vacuum

Abstract:In this paper, we prepared the CIGS thin films with various [Cu]/[In + Ga] ratios by selenization of Cu0.8Ga0.2 and In2Se3 precursor films. The properties of Cu(In,Ga)Se-2 film and related solar cell were investigated. Raman spectra confirm that the secondary Cu2-xSe phase tends to segregate at film surface. SEM results show that the grain-size improves noticeably with the increase of the [Cu]/[In + Ga] ratios. For Cu-rich CIGS films, the performances of the related solar cells were damaged greatly and good photovoltaic characteristics cannot be obtained. For near-stoichiometric and Cu-poor films, the mean conversion efficiency close to 10% was achieved over a wide range of composition. (C) 2013 Elsevier Ltd. All rights reserved.
Progress of CuInGaSe2 Thin Film Photovoltaic Cells and Solar Materials

Dongyun WAN,Fuqiang HUANG

DOI: https://doi.org/10.14062/j.issn.0454-5648.2011.04.010

2011-01-01

Abstract:This review presents recent developments on CuInGaSe_2(CIGS) thin film solar cells and the key solar materials(such as surface-textured ZnO:Al transparent conducting films,graphene,and anti-reflection SiO_2 coatings).A route to fabricate CIGS solar cells,which belongs to a non-vacuum low-cost method for producing CIGS solar cells,is proposed.The photovoltaic efficiency of the solar cell can be 13.83%.The fabrication of high performance key materials is the main route to reduce the cost and improve the efficiency of the solar cells which can realize the stable enhancement of the properties and the sustainable development of the photovoltaic cells.
Study on the Modified Surface Layers of the Cigs Thin Films by Raman Spectra

Liu Wei,Sun Yun,Li Feng-yan,He Qing,Li Chang-jian,Tian Jian-guo

DOI: https://doi.org/10.3321/j.issn:1000-0593.2007.04.023

2007-01-01

Abstract:In the present paper, the properties of Cu(In(1-x) Ga(x)) Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the V(oc) and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.
Preparation and Characterization of Cu(In, Ga) (se, S)(2) Thin Films by Sulfurization of Electrodeposited, Cu(In,Ga)Se-2 Precursors

Lai Yan-Qing,Kuang San-Shuang,Liu Fang-Yang,Zhang Zhi-An,Liu Jun,Li Jie,Liu Ye-Xiang

DOI: https://doi.org/10.7498/aps.59.1196

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:The solar cell light absorber Cu (In, Ga) (Se, S)_2 (CIGSS) thin films were prepared by annealing the electrodeposited Cu(In,Ga)Se_2 (CIGS) precursors in H_2S ambient at 500℃ . The precursors and annealed films were characterized by energy dispersive X-ray spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering. The results show that the complete removal of oxygen atom from the film and a substitution of Se by S can be achieved by H_2S-annealing. Furthermore, the depth profiles of constituent elements become more uniform, and the Cu-Se micro-phase can be eliminated by H2S-annealing. Moreover, the CIGSS films have good crystallinity and smaller crystal lattice parameters with S and Ga incorporation into the chalcopyrite structure.
The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

Fangfang Liu,Qing He,Fengyan Li,Jianping Ao,Guozhong Sun,Zhiqiang Zhou,Yun Sun

DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.10.017

2005-01-01

Abstract:Cu(In, Ga)Se2(CIGS) thin films are prepared using a three-step co-evaporation process. Through different measurements, the relationship between compositional ratios and several characteristics (such as resistivity, carrier concentration and surface roughness) are studied. The range is suitable for III and Se contents, when the resistivity and carrier concentration are 102-103 Ω · cm and 1015-1016 cm-3 respectively. Moreover, the values of surface roughness decrease when the Cu/(Ga+In) ratio decreases. When the ratio is beyond 1.25, the change becomes slight. When it is near 1.0, the roughness ranges are between 30-60 nm. The maximum conversion efficiency reaches 12.1% (test condition: AM1.5, global 1000 W/m2).
Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

Feng Kang,Jianping Ao,Guozhong Sun,Qing He,Yun Sun

DOI: https://doi.org/10.1016/j.cap.2009.10.015

IF: 2.856

2009-01-01

Current Applied Physics

Abstract:In this paper, polycrystalline CuInxGa1−xSe2 (CIGS) thin film absorbers were prepared by selenizing electrodeposited (ED) precursors with two different levels of selenium content: rich in selenium and poor in selenium. Comparing the results obtained by X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM) and illuminated current–voltage (J–V), it was found that absorber layers processed from Se-poor ED precursors shows better crystalline quality and increased gallium incorporation, which thus improved cell performance, compared to the layers grown using Se-rich ED precursors. The best cell fabricated from Se-poor ED precursor shows a conversion efficiency of 1.63% at AM1.5 global light.
Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

W. Liu,Y. Sun,W. Li,C.-J. Li,F.-Y. Li,J.-G. Tian

DOI: https://doi.org/10.1007/s00339-007-4021-x

2007-01-01

Abstract:The properties of Cu(In1-xGax)Se-2 (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD, SEM, SIMS, illuminated J-V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further improved.
Preparation of Cu(In,Ga)Se 2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Xu Chuan-Ming,Sun Yun,Zhou Lin,Li Feng-Yan,Zhang Li,Xue Yu-Ming,Zhou Zhi-Qiang,He Qing

DOI: https://doi.org/10.1088/0256-307x/23/8/081

2006-01-01

Abstract:Cu(In,Ga)Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250°C, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu(In,Ga)Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560°C. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu(In,Ga)Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.
Gallium Grading on the Surface of Cu(In,Ga)Se_2 Absorber and Its Effects on the Performance of Solar Cells

王赫,刘芳芳,孙云,何青,张毅,李长健

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2010.01.045

2010-01-01

Abstract:Cu(In,Ga)Se2 thin films were prepared by three-stage co-evaporation process.By changing the source temperature of gallium in the third step,the gallium contents and distribution on the surface of the absorbers could be controlled.With the increase of gallium content on the surface of the thin film,the band gap of Space Charge Region (SCR) was elevated,which resulted in the increase of the open circuit voltage of solar cells.In addition,as gallium grading expanded the range of spectrum response of CIGS thin films,the loss of the short circuit current decreased,which lead to an improvement for the efficiency of solar cells.
Advances In Cu2znsn(S,Se)(4) Thin Film Solar Cells

Zhang Xue,Han Yang,Chai Shuang-Zhi,Hu Nan-Tao,Yang Zhi,Geng Hui-Juan,Wei Hao

DOI: https://doi.org/10.3866/PKU.WHXB201603073

2016-01-01

Acta Physico-Chimica Sinica

Abstract:CdTe and Cu(In,Ga)(S,Se)(2)(CIGSSe) light absorber materials have dominated the research field of compound semiconductor solar cells. Despite the high power conversion efficiencies and technological advances of CdTe and CIGS photovoltaic technologies, certain issues, like rare earth constituent elements or toxic elements, limit their future upscaled applications. In recent years, Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells have become research hotspots, drawing increased interest. With earth-abundant and environmentally benign constituent elements, CZTSSe light absorber materials are widely regarded as the next-generation photovoltaic technology that can replace CdTe and CIGS as a promising candidate for terawatt-level power output. In this review, the synthesis, structure, and properties of CZTSSe materials will be discussed. This review will primarily demonstrate the developments and recent advances of different fabrication techniques and deposition methods, such as vacuum-based and solution-based deposition methods, covering their advantages and disadvantages. Recent developments in CZTSSe fabrication methods and CZTSSe nanocrystal preparation approaches will also be reviewed. Finally, some limitations on CZTSSe photovoltaic technology will be analyzed, and directions for improvement will be suggested, helping scientists to make future developments in this field.
10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Peng Xiao,Zhao Ming,Zhuang Daming,Sun Rujun,Zhang Leng,Wei Yaowei,Wu Yixuan,Ren Guoan

DOI: https://doi.org/10.1016/j.apsusc.2018.02.172

IF: 6.7

2018-01-01

Applied Surface Science

Abstract:We reported a new method to fabricate submicron- thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron- thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%. (C) 2018 Elsevier B.V. All rights reserved.

RESERCH DEVELOPMENT OF Cu(In_xGa_(1-x))Se_2 THIN FILM SOLAR CELL ABSORBER MATERIAL

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

Research Development of Cu(In,Ga)Se_2 Based(cigs) Solar Cells

State-of-arts and Application Prospect of Thin Film Solar Cells Based on Cu(In,Ga)Se2

Electrodeposition of CuInSe_2 and Cu(In,Ga)Se_2 Thin Films for Solar Cells

Progress in Research on CuInS2 Material for Solar Cell

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Synthesis and Characterization of CIGS Powder

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Progress of CuInGaSe2 Thin Film Photovoltaic Cells and Solar Materials

Study on the Modified Surface Layers of the Cigs Thin Films by Raman Spectra

Preparation and Characterization of Cu(In, Ga) (se, S)(2) Thin Films by Sulfurization of Electrodeposited, Cu(In,Ga)Se-2 Precursors

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

Preparation of Cu(In,Ga)Se 2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Gallium Grading on the Surface of Cu(In,Ga)Se_2 Absorber and Its Effects on the Performance of Solar Cells

Advances In Cu2znsn(S,Se)(4) Thin Film Solar Cells

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets