Advances In Cu2znsn(S,Se)(4) Thin Film Solar Cells

Zhang Xue,Han Yang,Chai Shuang-Zhi,Hu Nan-Tao,Yang Zhi,Geng Hui-Juan,Wei Hao

DOI: https://doi.org/10.3866/PKU.WHXB201603073

2016-01-01

Acta Physico-Chimica Sinica

Abstract:CdTe and Cu(In,Ga)(S,Se)(2)(CIGSSe) light absorber materials have dominated the research field of compound semiconductor solar cells. Despite the high power conversion efficiencies and technological advances of CdTe and CIGS photovoltaic technologies, certain issues, like rare earth constituent elements or toxic elements, limit their future upscaled applications. In recent years, Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells have become research hotspots, drawing increased interest. With earth-abundant and environmentally benign constituent elements, CZTSSe light absorber materials are widely regarded as the next-generation photovoltaic technology that can replace CdTe and CIGS as a promising candidate for terawatt-level power output. In this review, the synthesis, structure, and properties of CZTSSe materials will be discussed. This review will primarily demonstrate the developments and recent advances of different fabrication techniques and deposition methods, such as vacuum-based and solution-based deposition methods, covering their advantages and disadvantages. Recent developments in CZTSSe fabrication methods and CZTSSe nanocrystal preparation approaches will also be reviewed. Finally, some limitations on CZTSSe photovoltaic technology will be analyzed, and directions for improvement will be suggested, helping scientists to make future developments in this field.