Abstract:In the presence of Se, Cu(In0.7Ga0.3)Se-2 (CIGS) thin films are prepared by the sequential evaporation of Ga, In, Cu at a constant substrate temperature between 250 degrees C and 550 degrees C on the Mo/soda lime glass substrates. The thickness values of films are about 0.7 mu m. The structural and phase properties of CIGS films are studied by an X-ray diffractometer, the morphology and crystalline quality are characterized by a scanning electron microscope, the depth profiles of elements are measured by a secondary ion mass spectroscopy, the surface compositions are analyzed by a Raman spectrometer, and the optical properties of CIGS films are measured by a spectrophotometer with an integrating sphere. It is found that the films prepared at substrate temperature above 450 degrees C each exhibite a single Cu(In0.7Ga0.3)Se-2 phase, and the homogenization of Ga/(Ga+In) distribution in the Ga-In-Se precursor is achieved by the diffusion of In atoms through grain boundaries. As the substrate temperature is less than 400 degrees C, a serious Ga phase separation is observed and the high content of Ga phase mainly exists at the top and bottom of CIGS films. Below 300 degrees C, a serious deterioration of crystalline quality is found, and Ga atoms cannot effectively enter into the CIS lattice position to form CIGS. The films prepared at the substrate temperature less than 400 degrees C are covered with lots of Cu(In0.5Ga0.5)Se-2 small grains, which results in the enhancement of the surface roughness and the formation of a light trapping structure at the interface of Cd/CIGS. Thus, the light absorption of solar cell is improved. In addition, the smaller gap value of the low Ga content phase also facilitats the light absorption, then the short-circuit current density of thinned solar cell is greatly improved. The analysis shows that the short-circuit current density is the main factor affecting the conversion efficiency of thinned solar cell prepared between 550 degrees C-350 degrees C. However, when the substrate temperature is below 350 degrees C, the reduction of V-OC and FF has become the main reason for the deterioration of solar cell. In conclusion, the efficiency of solar cell with 0.7 mu m CIGS absorber prepared at substrate temperature of 350 degrees C reaches 10.3% due to the improvement of short-circuit current density.

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

Effects of Cu Elements on Cu(In,Ga)Se2 Film and Solar Cell

Comparative Study of the Role of Ga in Cigs Solar Cells with Different Thickness

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Influence of Different Precursor Surface Layers on Cu(In1-Xgax)Se-2 Thin Film Solar Cells

Influences of Ga Gradient Distribution on Cu(In,Ga)Se-2 Film

Influence of Absorption Layer's Composition Ratio on the Properties of CIGS Solar Cells

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Cu(In, Ga)Se 2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties Versus Composition

Revealing Surface Modifications of Caesium Indium Selenium Treated Cu-rich Cu(In,Ga)Se2: A Study of the Suppression of the Interfacial Recombination

The High Efficiency Sub-Micrometer Cu(In, Ga)Se-2 Solar Cell Prepared On Low Temperature

Preparation and Properties of CuInxGa1−xSe2thin-film Solar Cell Absorbers from Selenization of Ga-rich Electrodeposited Precursors

A 12.1% EFFICIENT Cu ( In, Ga) Se2 THIN-FILM SOLAR CELL

Effects of Ga-source Temperature on Properties of Cu(In,Ga)Se_2 Thin Films and Solar Cell Fabricated by Three-step Co-evaporation Technique

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Properties of CuInxGa1−xSe2 Thin Films Grown from Electrodeposited Precursors with Different Levels of Selenium Content

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Engineering CIGS Grains Qualities to Achieve High Efficiency in Ultrathin Cu(InxGa1−x)Se2 Solar Cells with a Single-Gradient Band Gap Profile

Study on Performance of Polycrystalline Cu(In,Ga)Se2 Solar Cells under Different Irradiance

Study on the Modified Surface Layers of the Cigs Thin Films by Raman Spectra