Abstract:A precursor film with a Cu gradient was prepared in order to improve the quality of the absorber film produced by sputtering CIGS targets when using glass substrates. Two ceramic quaternary targets with different copper content were used for alternatively sputtering to get a bi-layer precursor film with a Cu gradient; meanwhile, the crystallization property and cell performance were studied. This was done in order to study the activities of the Cu element in the precursor layer before and after selenization. The film states of the temperature-rise period and high temperature selenization period were investigated. The appropriate structure of the precursor film was the Cu-rich layer underneath the Cu-poor layer. The Cu–Se phase, which is important for the crystalline property, can be produced in the Cu-rich layer under the heating period. The Cu-poor layer on the top reacts with the Cu-Se compound in the annealing process at a high temperature, and the big grain size of the absorber layer can be obtained due to Cu diffusion promoted by the gradient in the precursor film, as well as better conversion efficiency. This result shows that constructing the precursor film with a Cu gradient by sputtering different quaternary CIGS targets is a very promising fabrication method to obtain high-performance solar-cell devices with a good crystallization property under an annealing temperature of 550 °C and is suitable for further industrialized application.

Influences of Ga Gradient Distribution on Cu(In,Ga)Se-2 Film

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Effects Of Na Incorporated At Different Periods Of Deposition On Cu(In, Ga)Se-2 Films

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Ga-grading Profiles Formed by Incorporation of Gallium into Cu(In1−xGax)Se2 Absorber Thin Films

Investigation on the diffusion mechanism of Ga element and regulation of the V-shaped bandgap in CIGS thin films based on magnetron sputtering with a quaternary target

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Enhancing Photocurrent of Cu(In,Ga)Se2 Solar Cells with Actively Controlled Ga Grading in the Absorber Layer

Synthesis and Characterization of CIGS Powder

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Influence of a Precursor Film with a Copper Gradient on the Properties of a Copper Indium Gallium Selenide Solar Cell

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Metal Precursor Influence On Performance Of Cuin1-Xgaxse2 Films

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Preparation and characterization of the CIGS thin films with double-graded band gap

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.