Abstract:Gradient bandgap engineering has been acknowledged as an effective approach for improving the efficiency of CIGS solar cells. However, an effective method for achieving gradient bandgap engineering in quaternary sputtered CIGS films has not yet been identified. This is due to the uniform and singular nature of the quaternary target composition, as well as the complex kinetic mechanisms that result in the rearrangement of film elements (particularly Ga) during the annealing process. In this study, a grain boundary migration-driven diffusion mechanism for the Ga element in CIGS thin films was established to address the presented issue. The segregation of Ga element is believed to be caused by the flow velocity field generated from the migration of grain boundaries, and the distribution of Ga element can be precisely calculated using the mass transport equation. By modulating the V-shaped bandgap, a notable enhancement in open-circuit voltage (V oc ) was achieved, with an increase from 0.405 V to 0.515 V, leading to an effectively improvement of solar cell's efficiency. By comparing and analyzing the actual performance parameters of the solar cells and the simulated results, we conclude that the increase in V oc is due to the alteration in bandgap structure. This study presents a novel approach to bandgap engineering in quaternary sputtered CIGS films through the quantitative calculation of Ga element distribution.

Effects of Ga-source Temperature on Properties of Cu(In,Ga)Se_2 Thin Films and Solar Cell Fabricated by Three-step Co-evaporation Technique

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Effects Of Na Incorporated At Different Periods Of Deposition On Cu(In, Ga)Se-2 Films

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Optimization of the substrate temperature of narrow bandgap CIS solar cells by three stage coevaporation process

Optoelectronic Effects of Copper–Indium–Gallium–Sulfur (CIGS2)-Solar Cells Prepared by Three-Stage Co-Evaporation Process Technology

Synthesis and Characterization of CIGS Powder

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Investigation on the diffusion mechanism of Ga element and regulation of the V-shaped bandgap in CIGS thin films based on magnetron sputtering with a quaternary target

Enhancing Photocurrent of Cu(In,Ga)Se2 Solar Cells with Actively Controlled Ga Grading in the Absorber Layer

Effect of Ga Variation on the Bulk and Grain‐Boundary Properties of Cu(In,Ga)Se2 Absorbers in Thin‐Film Solar Cells and Their Impacts on Open‐Circuit Voltage Losses

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Effect of Se Flux on CuGaSe 2 Absorbers Deposited on ITO-coated SLG Substrates by Using a Three-Stage Co-Evaporation Process

The Effects of Preheating Temperature on CuInGaSe2/CdS Interface and the Device Performances

Modified co-evaporation process for fabrication of 4 cm × 4 cm large area flexible CIGS thin film solar cells on polyimide substrate