Rf-Mems Baw Filter Using Surface Micromachining

Peng Cong,Tian-Ling Ren,Jian-She Liu,Li-Tian Liu
DOI: https://doi.org/10.1080/10584580215524
2002-01-01
Integrated Ferroelectrics
Abstract:RF-MEMS bulk acoustic wave (BAW) filter using surface micromachining is successfully achieved using PZT as the piezoelectric layer. The resonant frequency is adjusted by changing the thickness of the SiO2 film on the top of the upper electrode. By etching the sacrificial porous silicon (PS) layer, the suspended structure is formed. This structure is able to eliminate the influence of the thick support film to the filter, and to improve the IC process compatibility and quality of the filter. Each resonator forms a self-supporting structure, so that the cross-talk between resonators with different frequencies will be dramatically reduced. In addition, dry-etching processes are used to improve the quality of the device. It is found that reactive ion etching (RIE) can be used to etch PZT/PT and platinum with a rate of 200 and 100 Angstrom/min respectively using HCFC-124 as the etching gas.
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