Dynamic SIMS Characterization of Interface Structure of Ag/Alq3/NPB/ITO Model Devices

WJ Song,ZP Li,SK So,Y Qiu,YF Zhu,LL Cao
DOI: https://doi.org/10.1002/sia.1016
2001-01-01
Surface and Interface Analysis
Abstract:In this study, we first profiled model organic light‐emitting diodes (OLEDs) with the structure Ag/tris(8‐hydroxyquinoline) aluminium (Alq3)/N,N′‐diphenyl‐N,N′‐bis[1‐naphthyl‐(1,1′‐biphenyl]‐4,4′‐diamine (NPB)/indium tin oxide (ITO) using dynamic SIMS. The element distribution across the multilayer and the dynamic SIMS spectra at different regions were obtained. It was shown that dynamic SIMS is a powerful tool in profiling OLEDs. Clear diffusion of Ag into the Alq3 layer was observed. The experimental results also revealed that a distinct interface for Alq3/NPB can be obtained using dynamic SIMS. Copyright © 2001 John Wiley & Sons, Ltd.
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