Abstract:The influence of annealing after sintering on the non-ohmic and dielectric behavior of CaCu3Ti4O12 ceramics was investigated from -140 to 200 degrees C. Sintering at 1080 degrees C was followed by a cooling rate of 2.5 degrees C/min and quenching to ambient temperature for comparison. And both ceramic samples were annealed in flowing O-2, then N-2 and O-2 again at 950 degrees C. It was found that annealing in O-2 can reduce dielectric loss and enhance non-ohmic behavior of the quenched sample, while dielectric loss rose back up again after annealing in N-2. On the contrary, the slow cooled sample showed low dielectric loss, analogous to annealing in O-2. Trapped electron relaxation processes caused by V-o(+) and V-0(++) in the depletion layer of Schottky barrier can be identified, and the energy levels were deduced to 0.10 eV and 0.49 eV respectively. A relaxation with an energy level of 0.66 eV was detected in slowly cooled sample, which can be eliminated by annealing in N-2 and then re-created by annealing in O-2. This energy level was proposed to relate with the additional interface states caused by oxygen adsorption along the interface. Introducing more electronegative defects at boundaries was supposed as a promising solution to promote the application of CCTO as non-ohmic device with low dielectric loss

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