Abstract:Over the past several years, the formation of nanowire heterostructures via a solid-state reaction between a semiconductor nanowire and metal contact pads has attracted great interest. This is owing to its ready application in nanowire field-effect transistors (FETs) with a well-controlled channel length using a facile rapid thermal annealing process. We report the effect of oxide confinement on the formation of Ge nanowire heterostructures via a controlled reaction between a vapor-liquid-solid-grown, single-crystalline Ge nanowire and Ni pads. In contrast to the previous formation of Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructures, a segment of high-quality epitaxial NiGe was formed between Ni(2)Ge and Ge with the confinement of Al(2)O(3) during annealing. Significantly, back-gate FETs based on this Ni(2)Ge/NiGe/Ge/NiGe/Ni(2)Ge heterostructure demonstrated a high-performance p-type transistor behavior, showing a large on/off ratio of more than 10(5) and a high normalized transconductance of 2.4 μS/μm. The field-effect hole mobility was extracted to be 210 cm(2)/(V s). Temperature-dependent I-V measurements further confirmed that NiGe has an ideal ohmic contact to p-type Ge with a small Schottky barrier height of 0.11 eV. Moreover, the hysteresis during gate bias sweeping was significantly reduced after Al(2)O(3) passivation, and our Ω-gate Ge nanowire FETs using Al(2)O(3) as the top-gate dielectric showed an enhanced subthreshold swing and transconductance. Therefore, we conclude that the Al(2)O(3) layer can effectively passivate the Ge surface and also serve as a good gate dielectric in Ge top-gate FETs. Our innovative approach provides another freedom to control the growth of nanowire heterostructure and to further achieve high-performance nanowire transistors.

Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Controllable Fabrication of GeSi Nanowires in Diameter of about 10 Nm Using the Top-Down Approach

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

Study on Thermal Oxidation of Si Nanowires

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process

Oxidation Resistant Germanium Nanowires: Bulk Synthesis, Long Chain Alkanethiol Functionalization and Langmuir-Blodgett Assembly

Germanium nanowires: Synthesis, electrical and “catalytic” properties

Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

Vertically Oriented Epitaxial Germanium Nanowires on Silicon Substrates Using Thin Germanium Buffer Layers

Oxide-Confined Formation of Germanium Nanowire Heterostructures for High-Performance Transistors

Mechanism in SiGe-on-Insulator Fabricated by Modified Ge-Condensation Technique

Electrochemically deposited germanium nanowires: Structure and resistivity against high-temperature oxidation

Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching.

Synthesis of Germanium Nanowires

Single-crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors

Nano-Scale Geo2 Wires Synthesized By Physical Evaporation