Abstract:The major part of this work concentrates on the details of the physical aspects of the columnar pore formation in the Si-face (0001), the C-face (000-1), and the a-face (11-20) of n-type 4H and 6H SiC samples using photoelectrochemical etching. The electrochemical etching of p-type 4H and 6H crystals is also illustrated. In Si-face n-type 4H and 6H SiC, the columnar pores are about one ¦Im in diameter. The formed porous layer is of high porosity and thus fragile. The formation of a hybrid partial columnar porous structure to improve the mechanical strength is discussed in detail. Nano-columnar pores are successfully fabricated in C-face n-type 4H and 6H SiC. The self-organized columnar pores have diameters of about 20 nm. The interpore spacing from center to center is between 40-60 nm depending on the etching conditions. The porous layer can be as thick as 200 ¦Im. The porosity of the porous structure is about 0.1. Systematic studies on the experimental control parameters, such as voltage, reaction temperature, surface roughness, HF concentration, and doping concentration, have been performed and are explained in detail. The formation mechanisms are discussed extensively based on crystallographic aspects, diffusion limited aggregation, impedance spectroscopy, voltammetry, equivalent circuits, and semiconductor/electrolyte interface (similar to a Schottky semiconductor/metal interface) electrochemistry. The 20 nm diameter nano-columnar pore formation has also been observed on the a-face n-type 6H SiC. The experimental observations are recorded and the voltage effects on the formed porous structure are discussed. In the electrochemical etching of p-type 4H and 6H SiC, the electrochemical polishing, porosity dependence on the current density, porosity variation during the etching and doping effects on the porous formation are discussed. The five appendices contain information about: (1) my publication list, (2) technical notes about the fabrication of porous SiC, (3) technical notes about the fabrication of porous Al2O3, (4) operation procedures and technical notes about the mechanical polishing of SiC, and (5) operation procedures and technical notes about the Varian 936-60 Leak Detector and the E-beam Evaporator in our laboratory.

Etching Characteristics for Tracks of Carbon Cluster Ions in Polycarbonate

Etching Characteristic for Tracks of Multicharged Ions in Polymer

Damage cross-section of carbon cluster ions Cn + (n = 1-5) collision with polycarbonate

The investigation of energy loss and damage in polycarbonate induced by MeV carbon clusters

The XPS Investigation on the PC Films Irradiated by MeV Cn+ (n = 1–5) Cluster Ions

Study on Reactive Ion Etching of Parylene C Polymer Film

Study of absorption spectra of PC films irradiated by MeV C ions and C2+ cluster ions

Surface Effect of Ultraviolet Radiation on Electrochemically Etched Alpha-Particle Tracks in PADC

Study on the preparation of porous polyethylene glycol terephthalate film and the influencing factors of etching rate

Influence of High Frequency Ex-electric Field on Etching Process and Shape of Pores for Nuclear Track Film

X-ray photoelectron spectroscopy of KrF laser-irradiated polycarbonate films

Irradiation Effects In Polycarbonate Induced By 2.1 Gevkr Ions

Mass spectrometric study of low energy Cs+ ion‐induced sputtered fragmentation of PADC polymer

Radiation Damage and Wettability Change of Low Energy C+ Implanted Polytetrafluoroethylene

Direct and indirect determination of track etch parameters after sequential UV-C exposure and etching for two swift heavy ions in PADC: Production of rocket-shaped tracks

Effect of Ion Etching on Polymethyl Methacrylate Surface

Study of etched ion track profiles in silicon dioxide membrane

Dry etching of copper phthalocyanine thin films: effects on morphology and surface stoichiometry

Formation and Characterization of Columnar Porous SiC Fabricated by Photo-Electrochemical Etching

The Effect of the Process Parameters on the Growth Rate and Composition of the Anti Scratch Films Deposited from TEOS by AP-PECVD on Polycarbonate

Structural Features and Formation Kinetics of CnD-m Cluster Ions