Abstract:The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick's second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration profiles of these samples became template profiles for the model in development. The model was developed based on phenomena described in the literature, such as the influence of the electric field of dopant ionized atoms and the influence of dopant atom concentration nearing the maximum concentration on the value of diffusion coefficient. It was proposed to divide the diffusion area into low and high dopant concentration region. A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration profile developed theoretically and the real profile measured using the SIMS method. A coefficient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.

A Model for Dopant Concentration in Czochralski Silicon Melts

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Diameter-Controlled Czochralski Growth of Silicon Crystals

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Germanium in Czochralski Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

A comprehensive model of high-concentration phosphorus diffusion in silicon

Study on the oxygen concentration reduction in heavily Sb-doped silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Nitrogen Effect on Self-Interstitial Generation in Czochralski Silicon Revealed by Gold Diffusion Experiments

Effect of Carbon Doping on Oxygen Precipitation Behavior in Internal Gettering Processing for Czochralski Silicon

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer