Abstract:Highly [111] oriented Pb(Ta0.05Zr0.48Ti0.47)O-3 (PTZT) ferroelectric thin films were deposited on Pt/TiO2/SiO2/Si substrates using a La0.67Sr0.33MnO3 (LSMO) buffer layer. It is found that the LSMO buffer layers induced highly (111) textured growth of PTZT films. Ferroelectric hysteresis measurements showed that the remnant polarization and coercive field of these films are about 20 mu C cm(-2) and 20 kV cm(-1), respectively. After 1 x 10(11) switching cycles at 5 V (about 100 kV cm(-1) applied held) in fatigue tests, the decay of non-volatile polarization of these films was only about 6% of the initial value. No significant degradation of the polarization can be found in these films over a waiting time of 1 x 10(5) s in the retain test. It is proposed that the high degree of (111) orientation of the PTZT films induced by LSMO is responsible for the excellent performance of the PTZT film capacitors. These studies demonstrated that the PTZT films with the LSMO buffer layer look very promising for ferroelectric memory applications and the developed techniques are very compatible with semiconductor technology.

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

The effect of PbOx buffer layer on the properties of Pb(Zr xTi1-x)O3 thin films prepared by RF magnetron sputtering

Preparation and Properties of Highly (100)-Oriented Pb(Zr0.2Ti0.8)O3 Thin Film Prepared by Rf Magnetron Sputtering with a PbOx Buffer Layer

Enhanced ferroelectric properties of epitaxial Pb(Zr,Ti)O3 film with LaAlO3 buffer

Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Enhanced ferroelectric property of (Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 thin films prepared by RF magnetron sputtering

Improved Dielectric and Ferroelectric Characteristics of Highly (111)-Oriented Pb(Zr0.52ti0.48)O-3 Films Produced by Sol-Gel Method

Enhanced Ferroelectric Properties of (pb0.90la0.10)ti0.975o3 Multilayered Thin Films Prepared by RF Magnetron Sputtering

Enhanced Ferroelectric and Dielectric Properties of Highly (100)-Oriented 0.67pb(mg1/3nb2/3)o3–0.33pbtio3 Thin Films with a Special Pb(Zr0.2,Ti0.8)O3/PbOx Bilayered Buffer Layer

Strain-enhanced dielectric and ferroelectric properties of Pb(Zr 0.8Ti0.2)O3/Pb(Zr0.2Ti 0.8)O3 multilayer thin films without buffer layers

Enhancement of Ferroelectricity and Large Dielectric Strength of Pb(Zr0.52ti0.48)O-3 Thin Films on Srtio3 Substrate with A Srruo3 Buffer

Preparation of Plzt Antiferroelectric Thin Films on Zro2 Buffered Substrates

Effects of Pzt Buffer Layers on Pzfnt Ferroelectric Thin Films

Effects of Buffer Layers on Electrical Properties of Pb(Zr,Ti)O3 Thin Films Derived by Metalorganic Decomposition

Enhanced electrical properties of Pb(Zr0.80Ti0.20)O3 thick films prepared by a modified sol–gel technique

PZT FERROELECTRIC THIN FILMS PREPARED BY SPUTTERING AT PURE OXYGEN AND HIGH PRESSURE

Enhanced Ferroelectric Properties Of Pb(Ta0.05zr0.48ti0.47)O-3 Thin Films On Pt/Tio2/Sio2/Si Substrates Using La0.67sr0.33mno3 Buffer Layers

Structure and Dielectric Tunability of (pb0.5ba0.5)zro3 Thin Films Derived on (sr0.95la0.05)tio3 Buffer-Layered Substrates

The Ferroelectric and Antiferroelectric Behavior of Pbtio3/Pbzro3-Multilayered Thin Films

Enhanced Dielectric and Ferroelectric Properties of Pb(Zr0.8Ti0.2)O3∕Pb(Zr0.2Ti0.8)O3 Multilayered Thin Films Prepared by Rf Magnetron Sputtering