Abstract:In recent years, Czochralski silicon (Cz-Si) crystals have been developing forward n-type, large diameter and low oxygen concentration. For this purpose, the modified heating zone structure for 300 mm diameter n-type Cz-Si crystal growth with dual side-heaters has been proposed, moreover, its feasibility and effectiveness were verified through numerical simulations and on-site experiments herein. The simulation results indicate that the proposed crystal growth technique with modified parameters can effectively enhance the uniformity of longitudinal temperature gradient in silicon melt and lower the temperature at silica crucible bottom, which is available for reducing oxygen concentration at crystal head. Based on it, 300 mm diameter n-type recharged Cz-Si (RCz-Si) crystals with the oxygen concentration in the range of 9.5 ~ 10.5 ppma were grown in on-site experiments, which is much lower than that grown in conventional heating zone structure. More importantly, the Photoluminescence (PL) images of the quarter wafers taken at the as-grown Cz-Si crystal head, middle and bottom have shown that little metastable defect can be annealed out during typical high-temperature oxidation at 1000 °C, confirming the excellent stability of thermally induced degradation. Consequently, this manuscript has demonstrated that the proposed crystal growth technique can realize dual goals of oxygen concentration controlling and crystal quality assurance in 300 mm diameter n-type Cz-Si crystal growth, which may promote the development of large diameter Cz-Si crystal growth technique and the related application industries.

Turbulent transport of oxygen in the Czochralski growth of large silicon crystals

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Diameter-Controlled Czochralski Growth of Silicon Crystals

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Crystal Growth and Oxygen Precipitation Behavior of 300 Mm Nitrogen-Doped Czochralski Silicon

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Rapid Thermal Process of Large Diameter Czochralski Silicon

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism