Abstract:ZnO nanowire inorganic/organic hybrid ultraviolet (UV) light-emitting diodes (LEDs) have attracted considerable attention as they not only combine the high flexibility of polymers with the structural and chemical stability of inorganic nanostructures but also have a higher light extraction efficiency than thin film structures. However, up to date, the external quantum efficiency of UV LED based on ZnO nanostructures has been limited by a lack of efficient methods to achieve a balance between electron contributed current and hole contributed current that reduces the nonradiative recombination at interface. Here we demonstrate that the piezo-phototronic effect can largely enhance the efficiency of a hybridized inorganic/organic LED made of a ZnO nanowire/p-polymer structure, by trimming the electron current to match the hole current and increasing the localized hole density near the interface through a carrier channel created by piezoelectric polarization charges on the ZnO side. The external efficiency of the hybrid LED was enhanced by at least a factor of 2 after applying a proper strain, reaching 5.92%. This study offers a new concept for increasing organic LED efficiency and has a great potential for a wide variety of high-performance flexible optoelectronic devices.

Improvement Of The Electroluminescence Performance Of Zno Nanorods/P-Gan Light Emitting Diodes With A Zno Films Interlayer

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Improvement Of Electroluminescence Performance By Integration Of Zno Nanowires And Single-Crystalline Films On Zno/Gan Heterojunction

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

The EL properties of well-aligned n-ZnO nanorods / p-GaN structure

High-Performance Ultraviolet Light-Emitting Diodes Using N-Zno/p-hbn/p-gan Contact Heterojunctions.

The Underlying Micro-Mechanism of Performance Enhancement of Non-Polar N-Zno/p-algan Ultraviolet Light Emitting Diode with I-Zno Inserted Layer

Blue/Green Electroluminescence From A Zno Nanorods/P-Gan Heteroj Unction Light Emitting Diode Under Different Reverse Bias

Enhanced Light Extraction Efficiency of Light-Emitting Diodes with ZnO Nanorod Arrays

Near-ultraviolet Electroluminescence from ZnO-based Light-Emitting Diodes with N-Zno Nanorod/p-Gan Direct-Bonding Heterojunction Structure

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Electroluminescence of ZnO nanorods/ZnMgO films/p-SiC structure heterojunction LED

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

Improved and Color Tunable Electroluminescence from N-Zno/hfo2/p-gan Heterojunction Light Emitting Diodes

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

The Influence of Zno Seed Layers on N-Zno Nanostructure/P-Gan Leds

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

N-Zno Nanorods/p-Cuscn Heterojunction Light-Emitting Diodes Fabricated by Electrochemical Method