Charge storage in a metal–oxide–semiconductor capacitor containing cobalt nanocrystals

Dengtao Zhao,Yan Zhu,Jianlin Liu

DOI: https://doi.org/10.1016/j.sse.2005.12.015

IF: 1.916

2006-01-01

Solid-State Electronics

Abstract:Self-assembled cobalt (Co) nanocrystals on ultra-thin silicon dioxide layer were fabricated by in situ annealing Co ultrathin films deposited with Co effusion cell in a molecular-beam-epitaxy chamber. The resultant nanocrystals obtained at the optimized annealing temperature are around 3–4nm in diameter with dot density of about 1×1012cm−2. The metal–oxide–semiconductor capacitors containing Co nanocrystals exhibit much longer retention times than a Si nanocrystal memory with the same tunneling oxide thickness. This study suggests that Co nanocrystal should be an excellent alternative to replace Si nanocrystal as floating gates for future nonvolatile flash-type memory application.