Dependence of lattice distortion of monoclinic phase on film thickness in Pb(Zr0.58Ti0.42)O3 thin films
J.N. Wang,L.D. Wang,W.L. Li,W.D. Fei
DOI: https://doi.org/10.1016/j.jallcom.2010.12.061
IF: 6.2
2011-01-01
Journal of Alloys and Compounds
Abstract:In this paper, the chosen composition of PZT film falls in rhombohedral phase region and the dependence of lattice distortion on film thickness in sol–gel derived Pb(Zr 0.58 Ti 0.42 )O 3 thin films was systematically investigated. The results confirm that the Pb(Zr 0.58 Ti 0.42 )O 3 films have monoclinic phase even though the composition falls in the rhombohedral phase region. The mixed textures of (1 0 0) and (1 1 1) occur in the PZT films. In the case of mixed textures, a method using ψ -scan XRD to characterize the phase type of Pb(Zr 0.58 Ti 0.42 )O 3 film is presented. It is found that the phase type of (1 0 0)-oriented grains is M A phase, and that of (1 1 1)-oriented grains is M B phase. Moreover, the lattice constants of both M A and M B phases are sensitive to the film thickness. The lattice distortion of monoclinic phase becomes smaller as film thickness increases. Keywords Pb(Zr 1− x Ti x )O 3 thin films Lattice distortion Film thickness Texture 1 Introduction Pb(Zr 1− x Ti x )O 3 (PZT) thin film has been widely used in many applications, such as actuators, sensors, and micro-electromechanical systems (MEMS), because of its giant piezoelectric [1–3] . The PZT phase diagram extensively accepted was proposed by Jaffe et al. [4] in 1971. In the phase diagram, the morphotropic phase boundary (MPB) apparently separates the tetragonal phase (T phase) and the rhombohedral phase (R phase) regions. In 1999, Noheda et al. [5] firstly reported the low symmetrical monoclinic phase (M phase) with the space group of Cm near MPB. The crystalline symmetry group of M phase is the subgroup of both T phase and R phase. Therefore, the phase transition between R phase and T phase becomes acceptable from the viewpoint of crystalline symmetry [6–9] . Furthermore, the M phase has been considered to be the origin of the giant piezoelectric properties of PZT ceramics with the composition in the vicinity of MPB owing to the symmetry-allowed rotation of the polarization direction of M phase [1,10–12] . Later on, a new PZT phase diagram including M phase was built based on the synchrotron radiation X-ray diffraction (XRD) results, as shown in Fig. 1 [13] . In this new diagram, there is a new dash line (corresponding to x ≈ 0.455) implying that the Zr-rich side boundary between R phase region and M-included region is still controversial. Yokota et al. [14] reported that PZT powders included the mixed phases (R + M) when 0.08 ≤ x ≤ 0.4. Pandey et al. [15] claimed that the single M phase with the space group of Cc was found within the R phase region in the phase diagram proposed by Jaffe et al. [4] . Singh et al. [16] found that only M phase was involved in PZT in the case of 0.40 ≤ x ≤ 0.475. Till now, the M phase lattice constants quite differ in the various literatures [13,17–22] , as listed in Table 1 . These differences were normally ascribed to the differences in sample preparation methods [14] . As well known, the lattice constants are highly dependent of interplanar spacing ( d ), and residual stress will cause the change of interplanar spacing. Therefore, the residual stress plays the key role in determining lattice constants. For PZT thin films, the film thickness is highly related to the residual stress. However, few reports study the dependence of the lattice constants and the phase transition on film thickness, i.e. lattice distortion of monoclinic phase and R → M phase transition in PZT thin films. In this study, Pb(Zr 0.58 Ti 0.42 )O 3 (PZT58/42) thin films (here the composition locates in R phase region) were deposited by sol–gel routine. We systematically studied the lattice distortion of monoclinic phase by changing the thickness of PZT thin films. 2 Experimental procedure PZT58/42 films were prepared on Pt/Ti/SiO 2 /Si substrates through sol–gel technology. Lead acetate trihydrate, zirconium n propoxide and titanium isopropoxide were used as the raw materials and 2-methoxyethanol [2-CH 3 OCH 2 CH 2 OH] was used as the solvent. The 10 mol% excessive Pb in precursor was added to compensate for the Pb volatility during high temperature annealing. The PZT precursor was firstly spin-coated on the substrate at the spinning rate of 4000 rpm, and then the spin-coated film was pyrolyzed at 500 °C on a hot plate for 2 min. The process was repeated for several times to obtain the desired film thickness. Finally, the PZT58/42 films were annealed at 650 °C for 3 min through rapid thermal annealing technique in the O 2 ambient. The XRD analysis of the films was carried out on a Philips X’Pert diffractometer with Cu Kα radiation operated at 40 kV and 40 mA. The θ –2 θ scans were conducted at different tilt angles, ψ , where ψ is the angle of the scattering vector of X-ray to the normal direction of the film. Obviously, the normal θ –2 θ scan is the case of ψ = 0°. The surface and cross-section morphologies were examined by a Hitachi S-4800 scanning electron microscope (SEM). The Raman spectral excitation was provided by an Ar-ion laser with the wave length of 458 nm. The scattered light was analyzed with a Jobin Yvon HR800 spectrometer. 3 Results 3.1 Microstructure and orientations Typical image of the surface morphology of PZT58/42 film as shown in Fig. 2 (a) indicates that the surface of PZT film is dense without any porosity. The cross-section morphology ( Fig. 2 b) of PZT58/42 film reveals the column grain microstructure. Fig. 3 shows θ –2 θ scan XRD curves at ψ = 0°. To simplify, the PZT58/42 film diffraction peaks are indexed using pseudo cubic coordinate system, which is denoted by subscript ‘C’. Indexing of Fig. 3 confirms that only perovskite phase (without any secondary phase) exists in PZT58/42 films. Besides, only 1 0 0 C , 1 1 1 C and 2 0 0 C diffraction peaks are visible, indicative of possibly mixed texture of (1 0 0) and (1 1 1). In order to determine the textures of PZT58/42 films, ω -scans for (1 1 1) and (2 0 0) diffractions were conducted [23] , and the results are shown in Fig. 4 . All of the peak positions locate approximately at the Bragg angle of corresponding diffraction planes. This confirms that the PZT58/42 films exhibit (1 1 1) and (1 0 0) mixed textures. Furthermore, the full widths at half maximum (FWHM) of all ω -scan curves are less than 7°, which indicates that the PZT58/42 films contain highly preferential orientations of (1 1 1) and (1 0 0). [23] 3.2 XRD method to analyze the crystal structures for different oriented grains Generally speaking, for a given grain, the residual stress components in crystalline coordinates are strongly related to its orientation, which would result in different residual stress state in different oriented grains. Therefore, in terms of thin film, it is very difficult to directly use Rietveld refinement in a θ –2 θ scan XRD curve because different peaks may belong to different oriented grains. In order to analyze the phase composition with a given orientation, the XRD peaks used must belong to the grains with the same orientation. Furthermore, the texture is symmetrical to the film normal direction. Consequently, the diffraction peaks for ( hkl )-oriented grains can be obtained through tilting the film. Because the films have the mixed textures of (1 0 0) C and (1 1 1) C , the phase structures of (1 0 0)- and (1 1 1)-oriented grains should be studied separately. For (1 0 0)-oriented grains, the high-intensity peaks correspond to 2 0 0 C at ψ = 0° and 1 1 1 C at ψ = 55° because the interplanar angle between {1 0 0} C and {1 1 1} C is about 55° (see Fig. 5 a ). Similarly, for (1 1 1)-oriented grains, the high-intensity peaks correspond to 1 1 1 C at ψ = 0° and 200 C at ψ = 55° (see Fig. 5 b). Because the diffraction peak features of 2 0 0 C and 1 1 1 C are very different among T, M and R phases, the phase types of PZT films in current work can be analyzed in comparison with the results of previous literatures [16,17,24] . 3.3 Phase type of (1 0 0)-oriented grains Fig. 6 shows the XRD curves for (1 0 0)-oriented grains of PZT58/42 films, which demonstrates that all diffraction peaks are asymmetrical. Each diffraction peak in Fig. 6 for PZT58/42 films is composed of at least two peaks. Especially when the film thickness is less than 250 nm, the peak is more obviously separated into at least two peaks. It was found that the T phase was seldom observed in PZT58/42 at room temperature [13,16,25] . Thus, the phase in the current PZT58/42 thin films may be R phase, M phase or R + M phases. 2 0 0 C diffraction peak of R phase should be single. But 2 0 0 C diffraction peak of M phase is composed of two peaks: {2 0 0} C and {0 0 2} C , and their intensities quite differ due to the different multiplicity factors. For conventional XRD equipments, the {2 0 0} C and {0 0 2} C peaks of M phase have a partial overlap because of small difference in interplanar spacing. That is the reason why the 2 0 0 C peak of M phase is asymmetrical. As seen from Fig. 6 (a), the 2 0 0 C diffraction peaks are asymmetrical, which indicates that the phase composition of (1 0 0)-oriented grains is not pure R phase. 2 0 0 C diffraction peaks were fitted by Person VII function, and the fitting curves are also shown in Fig. 6 (a). The intensity of peak 2 is about two times that of the peak 1 at low angle. As for M A and M C phases, the {0 0 2} C diffraction angle is lower than {2 0 0} C diffraction angle because interplanar spacing of {0 0 2} C plane is larger than that of {2 0 0} C plane. In addition, the multiplicity factor of {2 0 0} C plane is about two times that of {0 0 2} C plane. The peak shape of 2 0 0 C diffraction at ψ = 0° is similar to that of 2 0 0 C diffractions of M A or M C phases. Fig. 6 (b) shows the 1 1 1 C diffractions of (1 0 0)-oriented grains of PZT58/42 films. 1 1 1 C diffraction is composed of three diffraction peaks for M A and M C phases, but these three peaks are hardly separated by conventional XRD equipment. The peak shape of 1 1 1 C diffraction for M A or M C phase was estimated on the basis of the previous researches [16,17] and the multiplicity factors. The peak shapes of 1 1 1 C diffractions given in Fig. 6 (b) are consistent with those of M A and M C phases. The above analysis of peak shapes of 2 0 0 C diffractions at ψ = 0° and 1 1 1 C diffractions at ψ = 55° suggests that the (1 0 0)-oriented grains in all films mainly contain M phase. Even though R phase existed in the films, its contents should be very little. The reason is attributed to two aspects. On one hand, if the lattice constants of R phase are quite different from those of M phase, the 2 0 0c diffraction peak should include three separate peaks. Among these three peaks, two of them belong to M A or M C phase, and the third one belongs to R phase. However, the actual results in Fig. 6 (a) tell us that the 2 0 0 C diffraction does not exhibits characteristic of three peaks but obvious characteristic of two peaks. On the other hand, if R phase and M phase have the close lattice constants, the relative intensity ratio of peak 2 over peak 1 should deviate from 2. However, the relative intensity ratio of peak 2 over peak 1 fitted by Person VII function is almost 2. These two points lead to the conclusion that the content of R phase is ignorant. However, it is very hard to identify whether the phase composition of (1 0 0)-oriented grains is M A phase or M C phase because the diffraction peak symmetry of M A and M C phases is similar. But the R phase is easy to transform to M A phase under the condition of the residual stress [26] . So the phase of (1 0 0)-oriented grains may be identified as M A phase. Fig. 7 (a) shows the FWHM of 2 0 0 C diffraction peaks of (1 0 0)-oriented grains. The FWHM of 2 0 0 C decreases as the film thickens, which means that {2 0 0} C and {0 0 2} C peak positions become closer as the film become thicker. The ratio of d { 002 } C / d { 200 } C is shown in Fig. 7 (b). As the film thickness increases, the d { 002 } C / d { 200 } C ratio in (1 0 0)-oriented grains decreases till approaches 1, which means these two peaks are gradually close to each other. These results suggest that the lattice constants of M A phase are changeable as the film thickness varies. The details will be discussed in section 4 . 3.4 Phase type of (1 1 1)-oriented grains The 2 0 0 C diffractions at ψ = 55° and 1 1 1 C diffractions at ψ = 0° were measured to analyze the phase type of (1 1 1)-oriented grains, and the results are presented in Fig. 8 . We used the same method to analyze the (1 1 1)-oriented grains. The 2 0 0 C diffraction peaks at ψ = 55° are shown in Fig. 8 (a). However, the peak symmetry is opposite to that in Fig. 6 (a). Obviously this peak can also be separated into two peaks, and the relative intensity ratio of peak 3 over peak 4 is almost 2, which demonstrates that M B phase exists in (1 1 1)-oriented grains. For M B phase, the interplanar spacing of {2 0 0} C is larger than that of {0 0 2} C , and the multiplicity factor of {2 0 0} C is two times that of {0 0 2} C . This gives rise to the result that the intensity of peak 3 is about two times that of peak 4. Therefore, the peak symmetry in Fig. 8 (a) is opposite to that in Fig. 6 (a). Similarly, the symmetry of 1 1 1 C diffraction peak of M B phase should also be the opposite to that of M A phase peak, because the lattice constant c is shorter than a and b for M B phase when using the pseudocubic coordinate system. At the same time, the FWHM of 2 0 0 C at ψ = 55° for (1 1 1)-oriented grains decreases gradually as the film thickens, as shown in Fig. 9 (a) . This implies that the interplanar spacings of the {2 0 0} C and the {0 0 2} C planes become closer with the film thickness increasing. The ratio of d { 002 } C / d { 200 } C is shown in Fig. 9 (b). It is also found that the ratio gradually approaches to 1 with the film thickness increasing. This suggests that the phase type in the infinitely thick film (i.e. like stress-free ceramics) is R phase. This result is consistent with the previous reports where bulk PZT58/42 was considered as R phase. [4,13] 3.5 Raman spectra In order to further confirm the phase composition of PZT58/42 films, Raman spectrum tests were conducted, and the results are shown in Fig. 10 . It is seen that all the films exhibit the similar profiles, which means that all the films have the similar phase composition. Moreover, the Raman spectra of the PZT58/42 films exhibit the similar characteristics to that of PZT53/47 with M phase [27] . This Raman evidence is not contradictory to M phase in the PZT58/42 films. 4 Discussion The phase composition of PZT58/42 falling in the R phase region of the phase diagram was reported by Noheda et al. [13] (see Fig. 1 ). But in this study, the phase composition of PZT 58/42 films with different film thickness is M phase, which suggests that the phase transition from R phase to M phase took place due to the residual stress in thin films. Meanwhile, (1 0 0)- and (1 1 1)-oriented grains are of M A and M B phases, respectively, which may be caused by the following reasons. On the one hand, the lattice mismatch between (1 0 0)-oriented grains and (1 1 1)-oriented Pt substrate is different from that between (1 1 1)-oriented grains and (1 1 1)-oriented Pt substrate. [28] , and the residual stress state in (1 0 0)-oriented grains is different from that in (1 1 1)-oriented grains as well [29] . On the other hand, because of the different residual stress components of different-orientation grains in crystalline coordinates, Pb ion displacement direction for different-orientation grains induced by residual stress is different in perovskite unit cell, which leads to the difference in the symmetry of M phase. Generally speaking, the residual stress decreases with the film thickness increasing [30] . If the diffraction peak displacements are only caused by residual stress, the peak displacement directions for all diffractions should be the same. However, as shown in Figs. 6 (a) and 8 (a), with the film thickness increasing, the displacement directions of {2 0 0} C and {0 0 2} C diffraction peaks are converse and the two peaks approach to each other gradually, independent of (1 0 0)- or (1 1 1)-oriented grains. These results indicate that the diffraction peak displacements result from the change of lattice constants of M phase due to the residual stress changing in films. Accordingly, as shown in Figs. 7 (b) and 9 (b), d { 002 } C / d { 200 } C ratios approach 1 gradually with the film thickness increasing. This means that the displacement of Pb ion becomes smaller and smaller, and the lattice constants of M phase are gradually close to those of strain-free R phase. The change of lattice constants of M phase means that the spontaneous polarization direction of M phase is variable. Fig. 11 shows the rotation mechanism of spontaneous polarization direction of M phase with the film thickness increasing. The spontaneous polarization direction of M phase in ( x , x , 0) C plane rotates to that of R phase with the residual stress decreasing. The above results are consistent with the previous studies where the origin of the giant piezoelectric response of PZT thin film is considered as the result of the rotation of spontaneous polarization direction of M phase [10] . According to above discussion, we can conclude that the lattice constants of M phase are very sensitive to the state and magnitude of residual stress. In previous literatures, the M phase lattice constants quite differ (see Table 1 ). We think that this may be resulted from different residual stress in samples. Stress-free samples are hardly prepared because large residual stress may be induced by non-180° domain walls. Consequently, obtaining the unified lattice constants of M phase is very hard. 5 Conclusion PZT58/42 films with the composition in the R phase region are found to have mixed textures of (1 0 0) and (1 1 1). The phase composition of the PZT films was confirmed as M phase, but the phase composition of different-orientation grains is different. The (1 0 0)-oriented grains mainly conclude M A phase and (1 1 1)-oriented grains conclude M B phase. In addition, the d { 002 } C / d { 200 } C ratio of M phase approaches 1 gradually with the film thickness increasing, which implies the variation of the spontaneous polarization direction of M phase. References [1] M. Ahart M. Somayazulu R.E. Cohen P. Ganesh P. Dera H. Mao R.J. Hemley Y. Ren P. Liermann Z.G. Wu Nature 451 2008 545 [2] A. Nourmohammadi M.A. Bahrevar M. Hietschold J. Alloys Compd. 473 2009 467 472 [3] Y.H. Yu M.O. Lai L. Lu P. Yang J. Alloys Compd. 449 2008 56 59 [4] B. Jaffe W.R. Cook H. 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Folkman R.R. Das Y.H. Chu P. Shafer J.X. Zhang S. Choudhury V. Vaithyanathan Y.B. Chen D.A. Felker M.D. Biegalski M.S. Rzchowski X.Q. Pan D.G. Schlom L.Q. Chen R. Ramesh C.B. Eom Phys. Rev. Lett. 101 2008 107602 [27] A.G. Souza Filho K.C.V. Lima A.P. Ayala I. Guedes P.T.C. Freire F.F.A. Melo J. Mendes Filho E.B. Araújo J.A. Eiras Phys. Rev. B 66 2002 132107 [28] Z. Huang Q. Zhang R.W. Whatmore J. Appl. Phys. 85 1999 7355 7361 [29] J.N. Wang W.L. Li B. Feng C.Q. Liu X.L. Li Q. Sun W.D. Fei J. Alloys Compd. 506 2010 167 171 [30] Y. Sakamaki H. Fukazawa N. Wakiya H. Suzuki K. Shinozaki T. Ohno M. Kosec Jpn. J. Appl. Phys. 46 2007 6925 6928
What problem does this paper attempt to address?
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Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr+Ti) ratio
Shintaro Yokoyama,Yoshihisa Honda,Hitoshi Morioka,Shoji Okamoto,Hiroshi Funakubo,Takashi Iijima,Hirofumi Matsuda,Keisuke Saito,Takashi Yamamoto,Hirotake Okino,Osami Sakata,Shigeru Kimura
DOI: https://doi.org/10.1063/1.2126156
IF: 2.877
2005-11-01
Journal of Applied Physics
Abstract:Epitaxial Pb(Zr,Ti)O3(PZT) films, 1.5–2.0μm in thickness, with a Zr∕(Zr+Ti) ratio ranging from 0.20 to 0.75 were grown on (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The effects the Zr∕(Zr+Ti) ratio had on the crystal structure, dielectric and ferroelectric properties, and piezoelectric response of these films with different crystal orientations were systematically investigated. We ascertained from x-ray-diffraction reciprocal-space-mapping analysis that (001)T-∕(100)T-∕(100)R-,(101)T-∕(110)T-∕(110)R-∕(101¯)R-, and (111)T-∕(111)R-∕(111¯)R-oriented films had epitaxially grown on the respective (100)c-,(110)c-, and (111)c-oriented SrRuO3∕∕SrTiO3 substrates. The constituent phase changed from a tetragonal single phase, a mixture phase of a tetragonal and rhombohedral, to a rhombohedral single phase with increasing Zr∕(Zr+Ti) ratio irrespective of the orientation of the substrates. However, the range of the Zr∕(Zr+Ti) ratio of the film with the mixture phase differed depending on crystal orientation. This suggests that the stress relaxation process applied from the substrates changed due to crystal orientation. The relative dielectric constant was maximum for films with the mixture phase regardless of the crystal orientation. Remanent polarization was also maximum for these films on the (111)cSrRuO3∕∕SrTiO3 substrates, while it was minimum on the (100)c- and (110)c-oriented SrRuO3∕∕SrTiO3 substrates. Films with two phases coexisting had larger electric-field-induced strain than films with a single tetragonal or rhombohedral phase for the (111)-oriented films, but there were no remarkable changes in the (100)- and (110)-oriented films. Small ac signal measurements suggested that domain-wall motions easily occurred in the (111)-oriented films with the mixture phase compared with other orientations. These results indicated that the larger field-induced strain of the (111)-oriented PZT films consisting of a mixture of tetragonal and rhombohedral phases largely contributed to extrinsic factors such as domain-wall motions and phase transformation due to the applied electric field.
physics, applied
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Stability of the monoclinic phase in the ferroelectric perovskite PbZr(1-x)TixO3
B. Noheda,D.E. Cox,G. Shirane,R. Guo,B. Jones,L.E. Cross
DOI: https://doi.org/10.1103/PhysRevB.63.014103
2000-06-09
Abstract:Recent structural studies of ferroelectric PbZr(1-x)TixO3 (PZT) with x= 0.48, have revealed a new monoclinic phase in the vicinity of the morphotropic phase boundary (MPB), previously regarded as the the boundary separating the rhombohedral and tetragonal regions of the PZT phase diagram. In the present paper, the stability region of all three phases has been established from high resolution synchrotron x-ray powder diffraction measurements on a series of highly homogeneous samples with 0.42 <=x<= 0.52. At 20K the monoclinic phase is stable in the range 0.46 <=x<= 0.51, and this range narrows as the temperature is increased. A first-order phase transition from tetragonal to rhombohedral symmetry is observed only for x= 0.45. The MPB, therefore, corresponds not to the tetragonal-rhombohedral phase boundary, but instead to the boundary between the tetragonal and monoclinic phases for 0.46 <=x<= 0.51. This result provides important insight into the close relationship between the monoclinic phase and the striking piezoelectric properties of PZT; in particular, investigations of poled samples have shown that the monoclinic distortion is the origin of the unusually high piezoelectric response of PZT.
Materials Science
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Octahedral tilting, monoclinic phase and the phase diagram of PZT
F Cordero,F Trequattrini,F Craciun,C Galassi
DOI: https://doi.org/10.1088/0953-8984/23/41/415901
2011-10-19
Abstract:Anelastic and dielectric spectroscopy measurements on PbZr(1-x)Ti(x)O(3) (PZT) close to the morphotropic (MPB) and antiferroelectric boundaries provide new insight into some controversial aspects of its phase diagram. No evidence is found of a border separating monoclinic (M) from rhombohedral (R) phases, in agreement with recent structural studies supporting a coexistence of the two phases over a broad composition range x<0.5, with the fraction of M increasing toward the MPB. It is also discussed why the observed maximum of elastic compliance appears to be due to a rotational instability of the polarization linearly coupled to shear strain. Therefore it cannot be explained by extrinsic softening from finely twinned R phase alone, but indicates the presence also of M phase, not necessarily homogeneous.A new diffuse transition is found within the ferroelectric phase near x ~ 0.1, at a temperature T(IT) higher than the well established boundary T(T) to the phase with tilted octahedra. It is proposed that around T(IT) the octahedra start rotating in a disordered manner and finally become ordered below T(T). In this interpretation, the onset temperature for octahedral tilting monotonically increases up to the antiferroelectric transition of PbZrO(3), and the depression of T(T)(x) below x=0.18 would be a consequence of the partial relief of the mismatch between the average cation radii with the initial stage of tilting below T(IT).
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Composition-phase structure relationship and thickness-dependent ferroelectricity of rhombohedral phase in [1 1 1]-textured Nb-doped Pb(Zr,Ti)O3 thin films
Qi Yu,jingfeng li,Wei Sun
DOI: https://doi.org/10.1016/j.apsusc.2012.11.006
IF: 6.7
2013-01-01
Applied Surface Science
Abstract:2% Nb-doped [1 1 1]-oriented lead zirconate titanate films (PNZT) of different Zr/Ti ratios ranging from 30/70 to 70/30 with a fixed thickness were deposited on the Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by sol-gel method. The orientation degree, film morphology and phase transition of the PNZT films were investigated as a function of Zr/Ti ratios. The experimental results verified the composition-dependent phase transition from tetragonal to rhombohedral of the PNZT films with a visible [1 1 1] preferred orientation. To obtain high performance by making use of rhombohedrel [1 1 1]-oriented thin films, Pb(Zr0.6Ti0.4)Nb0.02O3 films with various thicknesses varying from 70 nm to 300 nm were studied to reveal the relationship among the film thickness, stress and ferroelectric response. It was found that ferroelectric property reached a high remnant polarization (Pr) of 61.7 μC/cm2 and a minimum coercive field (Ec) of 70.7 kV/cm at 300 nm due to the release of residual tensile stress. © 2012 Elsevier B.V. All rights reserved.
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Composition–phase Structure Relationship and Thickness-Dependent Ferroelectricity of Rhombohedral Phase in [111]-Textured Nb-doped Pb(Zr,Ti)O3 Thin Films
Qi Yu,Jing-Feng Li,Wei Sun
DOI: https://doi.org/10.1016/j.apsusc.2012.11.006
IF: 6.7
2013-01-01
Applied Surface Science
Abstract:2% Nb-doped [1 1 1]-oriented lead zirconate titanate films (PNZT) of different Zr/Ti ratios ranging from 30/70 to 70/30 with a fixed thickness were deposited on the Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates by sol–gel method. The orientation degree, film morphology and phase transition of the PNZT films were investigated as a function of Zr/Ti ratios. The experimental results verified the composition-dependent phase transition from tetragonal to rhombohedral of the PNZT films with a visible [1 1 1] preferred orientation. To obtain high performance by making use of rhombohedrel [1 1 1]-oriented thin films, Pb(Zr 0.6 Ti 0.4 )Nb 0.02 O 3 films with various thicknesses varying from 70 nm to 300 nm were studied to reveal the relationship among the film thickness, stress and ferroelectric response. It was found that ferroelectric property reached a high remnant polarization ( P r ) of 61.7 μC/cm 2 and a minimum coercive field ( E c ) of 70.7 kV/cm at 300 nm due to the release of residual tensile stress.
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Thickness-Dependent Phase Transition and Piezoelectric Response in Textured Nb-Doped Pb(Zr0.52Ti0.48)O3 Thin Films
Jing-Feng Li,Zhi-Xiang Zhu,Feng-Ping Lai
DOI: https://doi.org/10.1021/jp106384e
2010-01-01
The Journal of Physical Chemistry C
Abstract:[100]-textured Nb-doped Pb(Zr0.52Ti0.48)O3 (PNZT) films with different thicknesses from 80 to 600 nm were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by a sol−gel process. It was found that the local effective longitudinal piezoelectric coefficient, d33, initially increased with film thickness and reached a peak (∼220 pm/V) for an intermediate thickness (∼350 nm), but then decreased with further increasing thickness. XRD and Raman analyses revealed that, even for an identical Zr/Ti ratio of 52/48, which is near the morphotropic phase boundary of bulk PZT, a pseudophase transition from a tetragonal structure to a rhombohedral structure was induced in [100]-textured PNZT films because of changes in stress with film thickness. This finding revealed a special approach to enhance the piezoelectric properties of PZT-based thin films by combining compositional optimization and the substrate constraint effect.
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Antiferrodistortive Phase Transition in Pseudorhombohedral (Pb0.94Sr0.06)(Zr0.550Ti0.450)O3 : A Combined Synchrotron x-ray and Neutron Powder Diffraction Study
Ravindra Singh Solanki,S. K. Mishra,Anatoliy Senyshyn,I. Ishii,Chikako Moriyoshi,Takashi Suzuki,Yoshihiro Kuroiwa,Dhananjai Pandey
DOI: https://doi.org/10.1103/PhysRevB.86.174117
2014-03-21
Abstract:The controversies about the structure of the true ground state of pseudorhombohedral compositions of Pb(ZrxTi1-x)O3 (PZT) are addressed using a 6% Sr2+ substituted sample with x=0.550. Sound velocity measurements reveal a phase transition at Tc~279K. The temperature dependence of FWHM of (h00)pc peaks and the unit cell volume also show anomalies around 279K even though there is no indication of any change of space group in the synchrotron X-ray powder diffraction (SXRD) patterns. The neutron powder diffraction patterns reveal appearance of superlattice peaks below Tc~279K confirming the existence of an antiferrodistortive phase transition. The Rietveld analysis of the room temperature and low temperature SXRD data below Tc shows that the structure corresponds to single monoclinic phase in the Cm space group while the analysis of neutron powder diffraction data reveals that the structure of the ground state phase below Tc corresponds to the Cc space group. Our analysis shows that the structural models for the ground state phase based on R3c space group with or without the coexistence of the room temperature monoclinic phase in the Cm space group can be rejected.
Materials Science
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Phase Structure of Epitaxial Pb(Zr,Ti)O-3 Thin Films on Nb-Doped Srtio3 Substrates
Zhi-Xiang Zhu,Jing-Feng Li,Feng-Ping Lai,Yuhua Zhen,Yuan-Hua Lin,Ce-Wen Nan,Longtu Li,Jiangyu Li
DOI: https://doi.org/10.1063/1.2819613
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Epitaxial Pb(Zr,Ti)O3 (PZT) films were deposited on Nb-doped SrTiO3 (Nb:STO) monocrystalline wafers by a sol-gel method. It was observed that phase structure of prepared films depends on the orientation of Nb:STO substrates. Interestingly, tetragonal structure was only found for [001]-oriented PZT film on Nb:STO(100) substrate, whereas Nb:STO(111) substrate resulted in a [111]-oriented rhombohedral PZT film, regardless of Zr∕Ti ratios ranging from 40∕60 to 60∕40. The influence of substrate orientation on phase structure of epitaxial PZT films was discussed on basis of the lattice matching. Ferroelectric and piezoelectric properties of PZT films on different Nb:STO substrates were also studied.
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Combined Effect of Preferential Orientation and Zr/Ti Atomic Ratio on Electrical Properties of Pb(ZrxTi1−x)O3 Thin Films
W Gong,Jf Li,Xc Chu,Zl Gui,Lt Li
DOI: https://doi.org/10.1063/1.1759072
IF: 2.877
2004-01-01
Journal of Applied Physics
Abstract:Lead zirconate titanate [Pb(ZrxTi1−x)O3, PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO2/Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to control the texture of overlaid PZT thin films. A single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZT films. The dielectric and ferroelectric properties of PZT films with different preferential orientations were evaluated systemically as a function of composition. The maximums of relative dielectric constant were obtained in the morphotropic phase boundary region for both (100)- and (111)-textured PZT films. The ferroelectric properties also greatly depend on films’ texture and composition. The intrinsic and extrinsic contributions to dielectric and ferroelectric properties were discussed.
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Control of Tensile Stress on Inducing Formation and Tunability of (100) Oriented PbxSr1−xTiO3 Thin Films
Zan Zheng
DOI: https://doi.org/10.1007/s00339-014-8490-4
2014-01-01
Applied Physics A
Abstract:(100) Oriented Pb x Sr1−x TiO3 (PSTO) thin films are prepared on indium tin oxide (ITO)/glass substrates by sol–gel technique while inserting doped PbTiO3 (PTO)-inducing layer in between. The effect of tensile stress in PSTO on tunability and (100) orientation of the thin films was investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscope, and atomic force microscope, respectively. Results show that PSTO thin film deposited on doped PTO has (100) oriented structure while it is randomly oriented when deposited directly on the ITO/glass substrate. Lattice mismatch between PSTO and PTO appears, in which the in-plane lattice constant c is 0.3922–0.3924 nm in the former and 4.02–4.07 nm in the latter, respectively, contributing tensile stress in the PSTO due to different lattice constants between them. The stress in the PSTO thin film is 3.04, 3.15, 3.59 and 4.47 GPa when the doped PTOs are Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively. The orientation degrees of PSTO thin films are from 89.63, 90.31, 91.92 to 93.29 % with increasing stress of PSTO on Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively. Tunabilities of the well-oriented PSTO thin films increase in ascending order of 63 < 65 < 69 < 73 % when induced by oriented PTO layers of Fe–PTO, Tb–PTO, Co–PTO and Zn–PTO, respectively, which is in accordance with the degree of (100) orientation appearing in the thin films. The high tunability appears in the PSTO thin film while high (100) orientation is derived from the tensile stress. It is much higher than that of randomly oriented PSTO thin film.
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Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films
Sizhao Huang,Evert Houwman,Nicolas Gauquelin,Andrey Orekhov,Dmitry Chezganov,Johan Verbeeck,Sixia Hu,Gaokuo Zhong,Gertjan Koster,Guus Rijnders
DOI: https://doi.org/10.1002/admi.202400048
IF: 5.4
2024-06-08
Advanced Materials Interfaces
Abstract:Different symmetry phases are identified in PbZr0.6Ti0.4O3 ferroelectric thin films as function of the strain introduced by CaF2, SrTiO3 and PMN‐PT substrates. Measured strain‐temperature paths are successfully described by a multi‐domain LGD‐model that predicts the symmetry phases and phase transitions, and the observed enhanced piezoelectricity in one of the phases. Lead based bulk piezoelectric materials, e.g., PbZrxTi1‐xO3 (PZT), are widely used in electromechanical applications, sensors, and transducers, for which optimally performing thin films are needed. The results of a multi‐domain Landau–Ginzberg‐Devonshire model applicable to clamped ferroelectric thin films are used to predict the lattice symmetry and properties of clamped PZT thin films on different substrates. Guided by the thermal strain phase diagrams that are produced by this model, experimentally structural transitions are observed. These can be related to changes of the piezoelectric properties in PZT(x = 0.6) thin films that are grown on CaF2, SrTiO3 (STO) and 70% PbMg1/3Nb2/3O3‐30% PbTiO3 (PMN‐PT) substrates by pulsed laser deposition. Through temperature en field dependent in situ X‐ray reciprocal space mapping (RSMs) and piezoelectric force microscopy (PFM), the low symmetry monoclinic phase and polarization rotation are observed in the film on STO and can be linked to the measured enhanced properties. The study identifies a monoclinic ‐rhombohedral MC‐MA‐R crystal symmetry path as the polarization rotation mechanism. The films on CaF2 and PMN‐PT remain in the same symmetry phase up to the ferroelectric‐paraelectric phase transition, as predicted. These results support the validity of the multi‐domain model which provides the possibility to predict the behavior of clamped, piezoelectric PZT thin films, and design films with enhanced properties.
materials science, multidisciplinary,chemistry
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High-Temperature Monoclinic Cc Phase with Reduced c/a Ratio in Bi-based Perovskite Compound Bi2ZnTi1-xMnxO6
Runze Yu,Narumi Matsuda,Ken Tominaga,Keisuke Shimizu,Hajime Hojo,Yuki Sakai,Hajime Yamamoto,Kengo Oka,Masaki Azuma
DOI: https://doi.org/10.1021/acs.inorgchem.6b00618
2016-06-20
Abstract:Monoclinic phases with Cm, Pm, and Cc space groups are indispensable to understand the high performance of electromechanical properties at the morphotropic phase boundary (MPB) of lead-based perovskite oxides Pb(ZrxTi1-x)O3 (PZT), [Pb(Mg1/3Nb2/3)O3]1-x-(PbTiO3)x (PMN-PT), and [Pb(Zn1/3Nb2/3)O3]1-x-(PbTiO3)x (PZN-PT). Here, a nearly single monoclinic phase with space group Cc was observed in the Bi-based lead-free perovskite compound Bi2ZnTi1-xMnxO6 at x = 0.4. This phase was the same as the low-temperature phase of the MPB composition of PZT but existed at a much higher temperature. Despite the reduced pseudo c/a ratio of 1.065, which is the same as that of PbTiO3 at room temperature, ionic model calculation based on the Rietveld refinement data indicated the polarization of Bi2ZnTi0.6Mn0.4O6 is 95.8 μC/cm(2). The tilting and significant anisotropic distortion of the octahedron were found to cause the c/a ratio to reduce. Accordingly, the effective piezoelectric constant d33 of Bi2ZnTi0.6Mn0.4O6 thin film was found to be 12 pm/V.
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Ground state of (Pb0.94Sr0.06)(Zr0.530Ti0.470)O3 in the morphotropic phase boundary region: Evidence for a monoclinic Cc space group
Ravindra Singh Solanki,Akhilesh Kumar Singh,S. K. Mishra,Shane J. Kennedy,Takashi Suzuki,Yoshihiro Kuroiwa,Chikako Moriyoshi,Dhananjai Pandey
DOI: https://doi.org/10.1103/PhysRevB.84.144116
2014-03-21
Abstract:The antiferrodistortive (AFD) phase transition for a pseudotetragonal composition of Pb(Zr0.530Ti0.470)O3 (PZT) doped with 6% Sr has been investigated using sound velocity (4 to 320K), high resolution synchrotron X-ray powder diffraction (100 to 800K) and high resolution as well as high flux neutron powder diffraction measurements (4K) to settle the existing controversies about the true ground state of PZT in the morphotropic phase boundary (MPB) region. The multiplet character of the neutron diffraction profiles of (3/2 1/2 1/2)pc (pseudocubic or pc indices) and (3/2 3/2 1/2)pc superlattice peaks, appearing below the AFD transition temperature, rules out the rhombohedral R3c space group. The true ground state is confirmed to be monoclinic in the Cc space group in agreement with the predictions of the first principles calculations and earlier findings for pure PZT in the MPB region. 6% Sr2+ substitution and the use of high wavelength ({\lambda}=2.44Å) neutrons have played key role in settling the existing controversies about the true ground state of PZT in the MPB region.
Materials Science
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Effect of the orientation polarization and texturing on nano-mechanical and piezoelectric properties of PZT (52/48) films
C. J. Ramos-Cano,M. Miki-Yoshida,R. Herrera-Basurto,F. Mercader-Trejo,L. Fuentes-Cobas,O. Auciello,A. Hurtado-Macías
DOI: https://doi.org/10.1007/s00339-022-06374-3
2023-01-14
Applied Physics A: Materials Science and Processing
Abstract:Ferroelectric (piezoelectric) Pb (Zr 0.52 Ti 0.48 ) O 3 (PZT) films were synthesized using an aerosol-assisted chemical vapor deposition technique on (111) Pt/Ti/SiO 2 /Si substrates. The optimum deposition temperature was 350 °C, followed by annealing at 650 °C for 1 h. Tetragonal perovskite phase and preferred orientation {0 0 1} in the PZT films were determined by two-dimensional grazing incidence diffraction using synchrotron X-ray radiation and nano-beam electron diffraction (NBED). The PZT film grains' texture, represented by inverse pole representation, correlates with (0 0 1) and (1 1 1) orientations with approximate XRD peak distribution width of Ω ≈ 35°. The elastic-to-plastic transition of the piezoelectric-based structural deformation of the PZT films is represented by the pop-in, which marks the limit in the elastic behavior at the yield stress for which the material starts exhibiting permanent deformation, with the yield point being Y = 2.5 ± 0.7 GPa for the Pb (Zr 0.52 Ti 0.48 ) O 3 film. The hardness ( H = 7.5 ± 0.16 GPa), elastic modulus ( E = 126 ± 3 GPa), and scratching were evaluated at the nanoscale, using a nanoindentation technique. No delamination or cracks were observed near the residual scratching stage. The switching of piezoelectric domains and domain polarization process, as a function of films' texture, in the representative Pb (Zr 0.52 Ti 0.48 ) O 3 films, were studied using Piezoresponse Force Microscopy (PFM). The values of the saturation polarization, remnant polarization, coercive field, and piezoelectric constant were P s = 45 μC/cm 2 , P r =30 μC/cm 2 , E c = 22 kV/cm, and d 33 = 137 pm/V, respectively. The local piezoelectric hysteresis loops and film nanostructure correlate with the polarization orientation.
English Else
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Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation
Wen Gong,Jing‐Feng Li,Xiangcheng Chu,Zhilun Gui,Longtu Li
DOI: https://doi.org/10.1016/j.actamat.2004.02.025
IF: 9.4
2004-01-01
Acta Materialia
Abstract:Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary region were deposited onto Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates using a sol–gel method. A seeding layer was introduced between the most underlying surface of the PZT film and the platinum electrode surface to control the texture of the PZT thin film. The lead oxide seeding layer resulted in the formation of a single-phase perovskite and absolutely (1 0 0)-textured PZT film. SEM, XRD, XPS, and AES were used to characterize the evolution of the lead oxide layer and the PZT thin films. The growth kinetic mechanism of the (1 0 0)-textured PZT thin films was proposed phenomenologically. The ferroelectric and piezoelectric properties of the PZT films were also evaluated and discussed in association with different preferential orientations.
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Polarization states of polydomain epitaxial Pb(Zr1-xTix)O3 thin films and their dielectric properties
V. G. Kukhar,N. A. Pertsev,H. Kohlstedt,R. Waser
DOI: https://doi.org/10.48550/arXiv.cond-mat/0411636
2004-11-25
Materials Science
Abstract:Ferroelectric and dielectric properties of polydomain (twinned) single-crystal Pb(Zr1-xTix)O3 thin films are described with the aid of a nonlinear thermodynamic theory, which has been developed recently for epitaxial ferroelectric films with dense laminar domain structures. For Pb(Zr1-xTix)O3 (PZT) films with compositions x = 0.9, 0.8, 0.7, 0.6, 0.5, and 0.4, the "misfit strain-temperature" phase diagrams are calculated and compared with each other. It is found that the equilibrium diagrams of PZT films with x > 0.7 are similar to the diagram of PbTiO3 films. They consist of only four different stability ranges, which correspond to the paraelectric phase, single-domain tetragonal ferroelectric phase, and two pseudo-tetragonal domain patterns. In contrast, at x = 0.4, 0.5, and 0.6, the equilibrium diagram displays a rich variety of stable polarization states, involving at least one monoclinic polydomain state. Using the developed phase diagrams, the mean out-of-plane polarization of a poled PZT film is calculated as a function of the misfit strain and composition. Theoretical results are compared with the measured remanent polarizations of PZT films grown on SrTiO3. Dependence of the out-of-plane dielectric response of PZT films on the misfit strain in the heterostructure is also reported.
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Phase Transformation Properties of Highly (100)-Oriented Plzst 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-Srtio3 Single-Crystal Substrates
Xihong Hao,Jiwei Zhai,Zhenxing Yue,Jinbao Xu
DOI: https://doi.org/10.1111/j.1551-2916.2011.04736.x
IF: 4.186
2011-01-01
Journal of the American Ceramic Society
Abstract:In this work, (Pb0.97La0.02)(Zr0.85Sn0.12Ti0.03)O3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of ~700 nm were successfully fabricated on (100)‐oriented Nb–SrTiO3 single crystal via a sol–gel technique. X‐ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)‐preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P–E loops, the electric‐field, and temperature‐dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb–SrTiO3 substrates.
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ATOMIC FORCE MICROSCOPY AND X-RAY DIFFRACTION STUDIES OF Pb ( Zr 0
M. Knite,G. Mežinskis,I. Yuchnevicha,K. Kundziņš
Abstract:Ferroelectric thin films are still of interest as promising materials for miniature pyroelectric detectors or piezoelectric sensors. Traditional thermal treatment (electric furnace or powerful source of UV irradiation) of sol-gel films has problems in case of micro-composites and microsensors. It does not allow local treatment of selected layers of the composites. Localised and nondestructive treatment of the surface is possible by focused laser beam or electron beam of sufficient energy. The main advantage of laser processing is selection of separate layers of a multi-layered micro-composite for treatment by choosing a suitable wavelength. Particularly original techniques for production and treatment of PZT thin films are related to laser technologies applied to pulsed laser ablation [1] and cutting microstructures out of PZT films crystallised traditionally [2-4]. Most recently pulsed eximer lasers have been used to crystallise PZT sol-gel thin films [5]. The ArF laser radiation is absorbed within a too thin surface layer. In this case the film is defected by high thermal gradients arising between it and the substrate. Based on absorption spectra of lanthanum modified lead zirconate titanate Pb0.9La0.1(Zr0.65Ti0.35)O3 (PLZT10/65/35) ferroelectric ceramics [6] an idea of local and selective treatment of lead zirconite-titanate Pb(ZrXTi1-X)O3 (PZT) sol-gel film in the multilayer structure by CO2 laser radiation was formulated. Since materials used in microelectronics, such as Si, Ge, GaAs, are relatively transparent at λ = 10.6 μm, the CO2 laser may be preferable. It means that it would be possible to heat the PZT film without heating the Si substrate. The possibility to obtain PZT perovskite film on the SiO2/Si substrate by irradiation with CO2 laser was shown experimentally in our prior paper [7]. The present study has been focused on studies of CO2 laser induced crystallization in PZT sol-gel films by means of both X-ray diffraction and especially modified atomic force microscope. The following procedure was used to prepare solution for Pb(Zr0,58Ti0,42)3 (PZT58/42) sol-gel films. Ti etoxide and Zr propoxide each were added to CH3COOH by mixing for half an hour. Pb acetate was disolved in CH3COOH at warming. After that the mixtures of Ti and Zr were put together with added alcohol and mixed for 10 minutes. Then the Pb mixture was added and all the compounds were stirred 5 more minutes. Time of gelation of the obtained mixture was 2 months.. The sol-gel layers were made by dip-coating procedure. A thickness of sol-gel layer after one immersion was approximately 520 ± 40 nm. Prior to laser treatment the Si plate with sol-gel layer was annealed in oven at 450 C. The PZT sol-gel films were treated by means of CO2 laser set-up EPILOG 48 Series (SYNRAD). The laser operated in quasi CW mode. X-ray diffraction studies revealed the PZT perovskite structure (Pe) ratio growth at the expenses of pyrochlore structure (Py) with an increased power density of laser radiation (Figure 1). The ferroelectric and piezoelectric properties of laser treated and traditionally treated PZT films had to be investigated on micro-scale and nano-scale. Especially modified atomic force microscope NT-MDT Smena with Signal Recovery 7280 lock-in amplifier was used for microscale and nanoscale investigations. Some results of piezoelectric response measurements on nanoscale structure are shown on Figure 2. Poster
Physics,Materials Science
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Shift of Morphotropic Phase Boundary in High-Performance [111]-Oriented Epitaxial Pb (zr, Ti)O-3 Thin Films
Qi Yu,Jing-Feng Li,Zhi-Xiang Zhu,Ying Xu,Qing-Ming Wang
DOI: https://doi.org/10.1063/1.4731214
IF: 2.877
2012-01-01
Journal of Applied Physics
Abstract:High-performance epitaxial niobium-doped lead zirconate titanate thin films [Pb(ZrxTi1−x)0.98Nb0.02O3] with a fixed thickness were deposited on [111]-cut single-crystalline SrTiO3 substrates by a sol-gel process as a function of Zr/Ti ratio ranging from 20/80 to 80/20. An obvious shift of morphotropic phase boundary (MPB) was observed in the [111]-oriented epitaxial films. Deviating from the Zr/Ti ratio of 52/48 in bulk materials, the MPB composition in the as-deposited films was found to move to a lower Zr/Ti ratio between 30/70 and 40/60, which agrees with the theoretical analysis on the basis of lattice mismatch between films and substrates and is further confirmed by the XRD patterns and Raman spectrum as well as ferroelectric test. Furthermore, a superior remnant polarization (Pr) value among all the compositions was obtained at a Zr/Ti ratio of 30/70, indicating that the extrinsic ferroelectric polarization near the new morphotropic phase boundary will lead to outstanding dielectric and piezoelectric performance in the epitaxial PZT thin film system.
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Phase transition of PbTiO3 polycrystalline thin film prepared by metalorganic chemical vapor deposition on yttrium stabilized zirconium
Tao Yu,Yan-Feng Chen,Li Shun,Jian-Xie Chen,Nai-Ben Ming
DOI: https://doi.org/10.1016/0038-1098(95)00465-3
IF: 1.934
1995-01-01
Solid State Communications
Abstract:PbTiO3 thin films were grown on yttrium stabilized zirconia (YSZ) substrates by metalorganic chemical vapour deposition (MOCVD). X-Ray diffraction (XRD) pattern shows that the films are polycrystalline. The phase transition of the PbTiO3 thin film was studied by high temperature XRD. It was found that the temperature of phase transition from a tetragonal to a cubic phase was 535 degrees C and from a cubic to a tetragonal was 525 degrees C, higher than the phase transition temperature of bulk PbTiO3 (490 degrees C). By analyzing the XRD pattern at high temperatures, different phase transition behaviors of the grains with different c-axis orientations were found. Scanning electron microscopy (SEM) shows that the grain boundary exposed and the surface film becoming rough after heating and cooling treatment.