Vapor–solid growth route to single-crystalline indium nitride nanowires

Jun Zhang,Lide Zhang,Xinsheng Peng,Xiangfeng Wang

DOI: https://doi.org/10.1039/b111270h

2002-01-01

Journal of Materials Chemistry

Abstract:Large-scale fabrication of hexagonal wurtzite structure single-crystalline indium nitride nanowires was achieved through a gas reaction from mixtures of In metal and In2O3 powders with flowing ammonia at 700 degreesC via a vapor-solid process.

What problem does this paper attempt to address?

Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Jing Gao,Oleg I. Lebedev,Stuart Turner,Yong Feng Li,Yun Hao Lu,Yuan Ping Feng,Philippe Boullay,Wilfrid Prellier,Gustaaf van Tendeloo,Tom Wu

DOI: https://doi.org/10.1021/nl2035089

IF: 10.8

2011-01-01

Nano Letters

Abstract:Rational synthesis of nanowires via the vapor-liquid-solid (VLS) mechanism with compositional and structural controls is vitally important for fabricating functional nanodevices from bottom up. Here, we show that branched indium tin oxide nanowires can be in situ seeded in vapor transport growth using tailored Au-Cu alloys as catalyst. Furthermore, we demonstrate that VLS synthesis gives unprecedented freedom to navigate the ternary In-Sn-O phase diagram, and a rare and bulk-unstable cubic phase can be selectively stabilized in nanowires. The stabilized cubic fluorite phase possesses an unusual almost equimolar concentration of In and Sn, forming a defect-free epitaxial interface with the conventional bixbyite phase of tin-doped indium oxide that is the most employed transparent conducting oxide. This rational methodology of selecting phases and making abrupt axial heterojunctions in nanowires presents advantages over the conventional synthesis routes, promising novel composition-modulated nanomaterials.
Shape-Controllable Synthesis of Indium Oxide Structures: Nanopyramids and Nanorods

Ye Zhang,Hongbo Jia,Dapeng Yu,Xuhui Luo,Zhensheng Zhang,Xihong Chen,Cheoljin Lee

DOI: https://doi.org/10.1557/JMR.2003.0389

IF: 2.7

2003-01-01

Journal of Materials Research

Abstract:We describe a vapor-phase route to the controllable synthesis of indium oxide micro-and nanopyramids on the silicon wafer via selective epitaxial vapor-solid growth by a methane-assist thermal reduction method. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the pyramids were cubic single crystals with a tetragonal symmetry. The size, morphology, and density of pyramids could easily be controlled by tuning reaction parameters. The method has good compatibility with other procedures involved in the microfabrication processes. Laterally grown indium oxide nanorods on the silicon wafer were also prepared via a vapor-liquid-solid mechanism. Those crystalline In 2 O 3 nanorods were about 100 nm in diameter and 1 μm in length. The as-synthesized indium oxide nanopyramids and nanorods could offer novel opportunities for both fundamental research and technological applications.
Bulk-quantity synthesis of single-crystalline indium nitride nanobelts

Shudong Luo,Weiya Zhou,Zengxing Zhang,Xinyuan Dou,Lifeng Liu,Xiaowei Zhao,Dongfang Liu,Li Song,Yanjuan Xiang,Jianjun Zhou,Sishen Xie

DOI: https://doi.org/10.1016/j.cplett.2005.06.053

IF: 2.719

2005-01-01

Chemical Physics Letters

Abstract:Wurtzite InN nanobelts have been synthesized in bulk quantities by means of in situ nitriding indium oxide powders in ammonia flux, with a high yield, high purity and good reproducibility. As-synthesized InN nanobelts have typical widths of 1–5μm, thickness of 40–50nm and lengths of tens to hundreds of microns imaged by scanning electron microscopy. Transmission electron microscopy reveals that the synthesized InN nanobelts are single crystalline in [0001] orientation and preferentially enclosed by top surfaces ±(011¯0)/side surfaces ±(21¯1¯0). Photoluminescence spectrum of InN nanobelts at room temperature shows a strong emission peak centered at 704nm (1.76eV).
Large-scale synthesis of in2O3 nanowires and their characterization

Fanhao Zeng,Xiaozhong Zhang

2005-01-01

Materials Science Forum

Abstract:Large-scale single-crystalline In2O3 nanowires were successfully synthesized by simply evaporating the pure indium at 950°C. The as-synthesized products, characterized by XRD, SEM, and TEM, were pure, structurally uniform, and single crystalline with typical diameters of 10 to 100 nanometers and lengths of up to a few hundreds of micrometers. The growth mechanism of the nanowires also was discussed. © 2005 Trans Tech Publications, Switzerland.
Large-Quantity Synthesis of Single-Crystalline Metal Indium Nano/Sub-Micron Wires

Zhang Yang,Shan Xu-Dong,Liao Zhi-Min,Zhao Qing,Xu Jun,Yu Da-Peng

DOI: https://doi.org/10.1088/0256-307x/25/2/078

2008-01-01

Chinese Physics Letters

Abstract:Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAIN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.
Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Sd Luo,Wy Zhou,Zx Zhang,Lf Liu,Xy Dou,Jx Wang,Xw Zhao,Df Liu,Y Gao,L Song,Yj Xiang,Jj Zhou,Ss Xie

DOI: https://doi.org/10.1002/smll.200500053

IF: 13.3

2005-01-01

Small

Abstract:Large quantities of indium nitride (InN) nanowires are synthesized by the in situ nitriding of indium oxide (In2O3) powders in an ammonia (NH3) flux. Tens of milligrams of nanowires are obtained in one batch. Every 100 mg of In2O3 starting powder can produce up to 65 mg of InN nanowires under the optimized conditions. The synthesized nanowires grow along the [001] direction with excellent crystallinity. They are of high purity and are 30-50 mu m in length with an almost uniform diameter of about 100 nm. Photoluminescence measurements of the nanowires exhibit a strong peak at 707 nm. An optical bandgap of about 1.7 eV is estimated based on the absorption spectrum. The experimental results also demonstrate that the approach of nitriding In2O3 powders in situ is feasible for the synthesis of high-purity InN nanowires in large quantities, with good reproducibility and without catalyst materials. The synthesis of InN nanowires in large quantities would be of benefit to the further study and understanding of their intrinsic properties, as well as being advantageous for their potential application in nanodevices.
Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth

Y Q Chen,J Jiang,B Wang,J G Hou

DOI: https://doi.org/10.1088/0022-3727/37/23/014

2004-01-01

Abstract:In this paper, bulk-quantity tin-doped indium oxide nanowires were successfully synthesized by direct thermal evaporation of a mixture of In and SnO powders in air at 920degreesC. Such nanowires have a uniform shape and single crystalline cubic bixbite structure, with the diameters varying from 100 to 200 nm and lengths in the range of tens to hundreds of micrometres. The growth process of these ternary oxide nanowires can be interpreted by a self-catalytic vapour-liquid-solid growth mechanism. This approach to synthesizing ternary oxides should be readily extensible to preparing other multinary oxide nanowires, such as Cd2SnO4, Zn-Sn-In-O, Ga-In-Sn-O, Cd-In-Sn-O and Zn-Sn-Cd-O nanowires or nanobelts.
Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Nie Chao,Zhang Rong,Xie Zi-Li,Xiu Xiang-Qiang,Liu Bin,Fu De-Yi,Liu Qi-Jia,Han Ping,Gu Shu-Lin,Shi Yi,Zheng You-Dou

DOI: https://doi.org/10.1088/0256-307x/25/5/070

2008-01-01

Abstract:One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite (w-InN), zincblende structure (z-InN) is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich-Schwoebel barrier.
Catalyst Synthesis and Growth of Indium Nitride Nanodots

ZL Xie,R Zhang,ZX Bi,B Liu,XQ Xiu,SL Gu,B Shen,Y Shi,YD Zheng

DOI: https://doi.org/10.1109/sim.2005.1511406

2004-01-01

Abstract:The technique of indium droplets catalyst is used for the synthesis of InN nanodots on (0001) sapphire substrates via metalorganic chemical vapor ldeposition (MOCVD) technique using trimethyindium(TMIn: (CH3)(3)In) and NH3. The morphology evolution of the InN nanodots are studied by AFM. The structure of the prepared sample is characterized by X-ray diffraction (XRD) and Raman scattering. And the XPS has been used to investigate the elemental composition of InN nanodots. Our results demonstrate that In droplets catalyst MOCVD can be a very effective way to grow InN nanodots.
An “edge to Edge” Jigsaw-Puzzle Two-Dimensional Vapor-Phase Transport Growth of High-Quality Large-Area Wurtzite-Type ZnO (0001) Nanohexagons

Jian-Min Li,Long-Gui Dai,Xiao-Ping Wan,Xian-Lin Zeng

DOI: https://doi.org/10.1063/1.4761942

IF: 4

2012-01-01

Applied Physics Letters

Abstract:The authors reported the synthesis of large but thin transparent regularly shaped single-crystalline zinc oxide (ZnO) (0001) hexagonal nanodisks (or nanohexagons) (the most probable area scale of 95 μm2 and 40–70 nm in thickness) by an indium assisted vapor-phase transport (VPT) growth route at ambient pressure. These large-area ZnO nanohexagons exhibit excellent luminescent properties with a strong ultraviolet emission band centered at about 384 nm and a very weak green band shoulder emission, leading to the further creation of a promising low-defect-concentration nanohexagons-based nanooptoelectronics. Finally, a two-dimensional VPT growth mechanism was proposed to understand the formation of high-quality wurtzite-type ZnO nanohexagons.
From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Yuqing Wang,Ruzhi Wang,Yujie Li,Yuefei Zhang,Mankang Zhu,Biben Wang,Hui Yan

DOI: https://doi.org/10.1039/c2ce26555a

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Gallium nitride nanowires (GaN NWs) were successfully grown on silicon substrates deposited with a thin gold film by plasma-assisted hot filament chemical vapor deposition (CVD), where GaN powder was used as the Ga source and nitrogen and hydrogen gases were used for the reactive gases. The diameters of synthesized GaN NWs are in a range of 40-150 nm and the lengths of some of the NWs are up to over 10 mu m. The GaN NWs crystallize in a wurtzite structure and they are grown in alignment or bending modes depending on the growth conditions. The photoluminescence spectra exhibit five emission bands at about 379, 396, 467, 481 and 491 nm, which are related to the band edge emission, defects and impurities of GaN NWs, respectively. Furthermore, the excellent field emission (FE) properties of GaN NWs were observed, and the FE results reveal that the GaN NWs have a low turn-on field of 1.66 V mu m(-1). It supplies a simple strategy to prepare GaN NW films for optical and electrical applications.
Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Zhuo Chen,Yanan Li,Chuanbao Cao,Songrui Zhao,Saeed Fathololoumi,Zetian Mi,Xingyan Xu

DOI: https://doi.org/10.1021/ja209072v

2012-01-18

Abstract:Large-scale cubic InN nanocrystals were synthesized by a combined solution- and vapor-phase method under silica confinement. Nearly monodisperse cubic InN nanocrystals with uniform spherical shape were dispersed stably in various organic solvents after removal of the silica shells. The average size of InN nanocrystals is 5.7 ± 0.6 nm. Powder X-ray diffraction results indicate that the InN nanocrystals are of high crystallinity with a cubic phase. X-ray photoelectron spectroscopy and energy-dispersive spectroscopy confirm that the nanocrystals are composed of In and N elements. The InN nanocrystals exhibit infrared photoluminescence at room temperature, with a peak energy of ~0.62 eV, which is smaller than that of high-quality wurtzite InN (~0.65-0.7 eV) and is in agreement with theoretical calculations. The small emission peak energy of InN nanocrystals, as compared to other low-cost solution or vapor methods, reveals the superior crystalline quality of our samples, with low or negligible defect density. This work will significantly promote InN-based applications in IR optoelectronic device and biology.
Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

JJ Niu,J Sha,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.03.022

IF: 3.369

2004-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Silicon nano-wires (SiNWs) with diameter of ∼30nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested.
Single Crystalline Semi-Nanotubes Of Indium Germanate

Chaoyi Yan,Tao Zhang,Pooi See Lee

DOI: https://doi.org/10.1021/cg8004882

IF: 4.01

2008-01-01

Crystal Growth & Design

Abstract:Single crystalline In2Ge2O7 nanotubes were synthesized by a thermal evaporation method. The growth mechanism of those novel seminanotubular structures was explained to be a vapor-liquid-solid (VLS) mechanism. Its morphology and structures were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). The semi-nanotubes have widths of 80-500 nm and lengths of 5-20 mu m. As-synthesized products were found to be single crystalline In2Ge2O7 with a monoclinic crystal structure. Indium particles serve as catalysts to direct nanotube growth. Germanium concentration nonuniformity is proposed to be the reason for a semi-nanotubular structure nucleation rather than nanotubes or nanowires.
Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Ming Li,Jingyun Wang,Kan Li,Yingjie Xing,H. Q. Xu

DOI: https://doi.org/10.1016/j.jcrysgro.2015.08.006

IF: 1.8

2015-01-01

Journal of Crystal Growth

Abstract:We report on the growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H2 carrier gas flow rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas flow rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications.
One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

B.K. Barick,Shivesh Yadav,S. Dhar

DOI: https://doi.org/10.1016/j.jcrysgro.2017.09.001

2017-07-04

Abstract:GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature around 910 degree Celsius. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along direction. It has also been observed that the average width of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.

Materials Science
Controlled Synthesis of In2O3 Octahedrons and Nanowires

YF Hao,GW Meng,CH Ye,LD Zhang

DOI: https://doi.org/10.1021/cg050103z

IF: 4.01

2005-01-01

Crystal Growth & Design

Abstract:Indium oxide (In2O3) octahedrons and nanowires were synthesized by chemical vapor deposition (CVD) through selecting appropriate source materials and controlling proper external conditions. The growth mechanisms of In2O3 octahedrons and nanowires were analyzed in detail, based on which growth model of single-crystalline In2O3 nanostructures with different morphologies was proposed. The vapor pressures of different source materials, the temperature difference between the central heating zones and the product deposition zones, the reaction time, and the surface energies are all responsible for the final crystalline morphologies of the In2O3 nanostructures. The acquired results may facilitate not only the exploration of new approaches of preparing various nanostructures for potential technical application but also a deeper understanding of the fundamental physical and chemical processes of CVD methods.
Growth Study of Indium-Catalyzed Silicon Nanowires by Plasma Enhanced Chemical Vapor Deposition

I. Zardo,S. Conesa-Boj,S. Estradé,L. Yu,F. Peiro,P. Roca i Cabarrocas,J. R. Morante,J. Arbiol,A. Fontcuberta i Morral

DOI: https://doi.org/10.1007/s00339-010-5802-1

2010-01-01

Abstract:Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction. When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm−1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.
In Situ Generation of Indium Catalysts to Grow Crystalline Silicon Nanowires at Low Temperature on Ito

Pierre-Jean Alet,Linwei Yu,Gilles Patriarche,Serge Palacin,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1039/b813046a

2008-01-01

Journal of Materials Chemistry

Abstract:In situ generation of indium catalyst droplets and subsequent growth of crystalline silicon nanowires on ITO by plasma-enhanced CVD are reported, and the wurtzite (Si–IV) phase is clearly evidenced in some wires.

Vapor–solid growth route to single-crystalline indium nitride nanowires

Ultrafast growth of single-crystalline Si nanowires

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Shape-Controllable Synthesis of Indium Oxide Structures: Nanopyramids and Nanorods

Bulk-quantity synthesis of single-crystalline indium nitride nanobelts

Large-scale synthesis of in2O3 nanowires and their characterization

Large-Quantity Synthesis of Single-Crystalline Metal Indium Nano/Sub-Micron Wires

Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Catalyst Synthesis and Growth of Indium Nitride Nanodots

An “edge to Edge” Jigsaw-Puzzle Two-Dimensional Vapor-Phase Transport Growth of High-Quality Large-Area Wurtzite-Type ZnO (0001) Nanohexagons

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Single Crystalline Semi-Nanotubes Of Indium Germanate

Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

Controlled Synthesis of In2O3 Octahedrons and Nanowires

Growth Study of Indium-Catalyzed Silicon Nanowires by Plasma Enhanced Chemical Vapor Deposition

In Situ Generation of Indium Catalysts to Grow Crystalline Silicon Nanowires at Low Temperature on Ito