Formation Of Ag/Si And Al/Si Films By Ion Assisted Deposition

Pan Xian-zheng,Pan Feng
DOI: https://doi.org/10.1016/0042-207X(89)90256-X
IF: 4
1989-01-01
Vacuum
Abstract:The Al and Ag films made by IVD were significantly modified in both mechanical and electrical properties. The cause lies in the deposition parameters: bombardment energy and ion/atom arrival rate ratio. It was found that the Al film hardness, the AlSi contact resistivity and the AlSi adhesion were improved in the deposition range: energy 250–500 eV and arrival ratio 0.06–0.10.
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