Analysis of active screen low temperature plasma-assisted deposition of iron nitride thin films on silicon (100) substrate
Muhammad Asghar,Muhammad Imran Bashir,Muhammad Tayyab,Muhammad Shafiq,Muhammad Yasin Naz,Ahmed Ahmed Ibrahim,Muhammad Shoaib
DOI: https://doi.org/10.1063/5.0195112
IF: 1.697
2024-03-01
AIP Advances
Abstract:Thin film technology has gained significant attention in the industry due to its superior properties in comparison to bulk materials. Specifically, iron nitride-based thin films are a fascinating area of research in semiconductor technologies. The crystal structure and optical properties of these films are highly dependent on the growth method, deposition technique, gas flow, pressure, and several other factors. In this work, we prepared polycrystalline thin films of iron nitride on silicon (100) substrates by using the active screen low temperature plasma-assisted method. These films are deposited under the varying atmosphere of nitrogen and hydrogen in four proportions: 80% N2 + 15% H2; 60% N2 + 35% H2; 40% N2 + 55% H2; and 20% N2 + 75% H2, along with 5% argon to investigate its influence on the structural, morphological, and optical properties. The structural properties are determined by x-ray diffraction and revealed a mixture of ζ-Fe2N, ε-Fe3N, and γ′-Fe4N phases. Surface morphology is analyzed by scanning electron microscopy, which confirms the formation of a thin layer on the substrate. In addition, UV–Vis spectrophotometry is used to assess the optical response and bandgap energy of the samples. The result of UV–Vis optical diffuse reflectance spectra shows a decrease in the bandgap from 3.17 to 3.06 eV of substrate. For the S4 sample, we obtained a pure Fe4N phase, showing a significant decrease in the energy bandgap.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology