Emergent Magnetic States and Tunable Exchange Bias at 3d Nitride Heterointerfaces
Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui‐juan Jin,Shanmin Wang,Er‐Jia Guo
DOI: https://doi.org/10.1002/adma.202208221
IF: 29.4
2022-10-29
Advanced Materials
Abstract:Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin‐orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides have been seldomly explored due to the difficulty in synthesizing high‐quality nitride films with correct compositions. Here we report the fabrication of single‐crystalline ferromagnetic Fe3N thin films with precisely controlled thicknesses. As film thickness decreased, the magnetization dramatically deteriorated, and the electronic state changed from metallic to insulating. Strikingly, the high‐temperature ferromagnetism was maintained in a Fe3N layer with a thickness down to 2 u. c. (∼8 Å). The magnetoresistance exhibited a strong in‐plane anisotropy; meanwhile, the anomalous Hall resistance reserved its sign when Fe3N layer thickness exceeded 5 u. c. Furthermore, we observed a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depended on the controllable bending curvature using the cylinder diameter engineering technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives toward practical applications. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology