Abstract:ZrO2 thin films in thickness of 17nm to 559nm were deposited on Si-(100) and glass substrates using mid-frequency reactive magnetron sputtering method. The microstructure analysis showed that the stable monoclinic phase preferentially grew in the initial growth stage, whereas the relative amount of tetragonal phase increased steadily with the increase of film thickness beyond the critical threshold (about 125nm in the present work). The different evolution of phase component with that in the case of chemical vapor deposition is considered due to the additional impact of energetic particles in the sputtering process. The film thickness also showed significant impacts on residual stress, refractive index and transmittance of the films. The stress magnitude changed remarkably during the early stages of film growth, and then tended to a stable compressive value. The optical transmittance degraded gradually in the initial growth stage, meanwhile the refractive index increased progressively until the bulk value was reached. The fact that both microstructural and optical properties of ZrO2 films are sensitive at thinner thickness indicates that the technical control of the sputtering process in the initial growth stage is crucial for microstructural and functional optimization of ultra-thin films.

XPS Investigation of Diffusion of Two-Layer ZrO2/SiO2 and SiO2/ZrO2 Sol–gel Films

XPS studies on ZrO2 thin films deposited on glass substrate by sol-gel

Primary Study of the Infiltrating Between Two-Layer ZrO2/SiO2 Sol-Gel Films

Infiltrating Between ZrO2 and SiO2 Sol-Gel Films

Study of the Diffusion Behaviour of MoO3 and ZnO on Oxide Thin Films by SR‐TXRF

Diffusing behavior of MoO3 on Al2O3 and SiO2 thin films

The impact of Si substrates on the properties of ZnO film

A Study of Interface Diffusion and Reaction of Ti/ZrN2/Si Film

Influence of Porosity on Laser Damage Threshold of Sol–gel ZrO2 and SiO2 Monolayer Films

XPS Study on Interfacial Properties Between ZrN Diffusion Barrier Layer and SiCON Low-k Dielectric Film

Interface Diffusion of Sputtered Cozrnb Films on Silicon Substrate

Contrast Study of Laser-induced Damage of Monolayer SiO2 and ZrO2 Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

XPS studies on composite TiO2-SiO2 thin films deposited on metal substrate by sol-gel

Interdiffusion Studies for HfO2/Si by GIXR and XPS

Thickness-dependent structural and optical properties of sputter deposited ZrO2 films

XPS Studies on Composite TiO<sub>2</sub>-SiO<sub>2</sub> Thin Films Deposited on Metal Substrate by Sol-Gel

Investigation of Interfacial Diffusion Between YSZ and SNDC Through Raman Spectroscopy

Study on the thermal stability and electrical properties of the high- k dielectrics (ZrO 2 ) x (SiO 2 ) 1− x

Comparison of ZrO2-SiO2 Sols Synthesized by Two Methods: Preparation, Stability and Physical-Chemical Structure

XPS Studies on Composite ZrO2-CeO2 Thin Films Deposited on Metal Substrate by Sol-Gel