Study of MoO3 Surface Diffusion on the Al2O3 Film

JF Yan,NZ Wu,HX Zhang,YC Xie,YQ Tang,YF Zhu,WQ Yao
DOI: https://doi.org/10.3866/pku.whxb19990804
1999-01-01
Acta Physico-Chimica Sinica
Abstract:A flat and compact Al2O3 film of 20nm in thickness was prepared on the substrate of Si wafer by magnetic controlled sputtering Al reaction with O-2 in Ar. A small amount of MoO3 was vaporized in vacuum and deposited onto a slot in a covering film on the surface of Al2O3 film, The samples were heated in dry or wet Nz, Oz and air respectively, characterized by TRSRF, AES, XPS, XRD and SEM to study the surface diffusion of MoO3 on the Al2O3 film. The results show that MoO3 can diffuse on the surface of Al2O3 film by heating the samples at 573K or 673K. The diffusion rate increases with the heating temperature. Moisture can accelerate the diffusion rate of MoO3 on the surface of Al2O3.
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