MEASURING MoO3 MAXIMUM SINGLE LAYER DISTRIBUTION THRESHOLD VALUE ON THE SURFACE OF γ-Al2O3 BY X-RAY DIFFRACTION

储刚,黄玮,由宏君
DOI: https://doi.org/10.3969/j.issn.1001-4012.2003.09.005
2003-01-01
Abstract:MoO_3 distribution threshold value on the surface of γ-Al_2O_3 is measured in this work.. After crystal phase MoO_3 and carrier γ-Al_2O_3 are fully compounded, they are baked at proper temperature below MoO_3 melting point. When MoO_3′s content is lower than a certain value, X-ray diffraction peak of crystal phase MoO_3 will disappear. When MoO_3′s content is higher than this value, crystal phase peak do not disappear, but its intensity will weaken. X-ray diffraction can measure remained crystal phase amount after baking and obtain MoO_3 maximum single layer distribution threshold value on the surface of γ-Al_2O_3. This work also shows the possibility of measuring maximum single layer distribution amount of other mixtures on the surface of carrier.
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