Abstract:High-entropy alloys (HEAs) and some complex alloys exhibit desirable properties and significant structural stability in harsh environments, including possible applications in advanced reactors. Energetic ion irradiation is often used as a surrogate for neutron irradiation; however, the impact of ion electronic energy deposition and dissipation is often neglected. Moreover, differences in recoil energy spectrum and density of cascade events on damage evolution must also be considered. In many chemically complex alloys, the mean free path of electrons is reduced significantly, thus their decreased thermal conductivity and slow dissipation of localized radiation energy can have noticeable effects on displacement cascade evolution that is greatly different from metals with high thermal conductivity. In this work, nanocrystalline HEAs of Ni20Fe20Co20Cr20Cu20 and nonequiatomic (NiFeCoCr)97Cu3, both having much lower room-temperature thermal conductivity than pure Ni or Fe, are chosen as model HEAs to reveal the role that electronic energy loss during ion irradiation has in complex alloys. The response of nanocrystalline HEAs is investigated under irradiation at room temperature using MeV Ni and Au ions that have different ratios of electronic energy to damage energy, which is the energy dissipated in displacing atoms. Different from previously reported amorphization of nanocrystalline SiC, experimental results on these HEAs show that, similar to the process in nanocrystalline oxide materials, both inelastic thermal spikes via electron–phonon coupling and elastic thermal spikes via collisions among atomic nuclei contribute to the overall grain growth. The growth follows a power law dependence with the total deposited ion energy, and the derived value of the power-exponent suggests that the irradiation-induced instability at and near grain boundaries leads to local rapid atomic rearrangements and consequently grain growth. The high power-exponent value can be attributed to the sluggish diffusion and delayed defect evolution arising from the chemical complexity intrinsic to HEAs. This work calls attention to quantified fundamental understanding of radiation damage processes beyond that of simplified displacement events, especially in simulating neutron environments.

Sketching of Preferred Energy Regime for Ion Beam Assisted Epitaxy

Enhancement of Atomic Rearrangement in Top Surface Layers by Low Energy Ions

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Determination of the Ehrlich-Schwoebel Barrier in Epitaxial Growth of Thin Films

Use of an energetic ion beam on the surface during physical vapor deposition

Assessing trajectory-dependent electronic energy loss of keV ions by a binary collision approximation code

Modeling of incident particle energy distribution in plasma immersion ion implantation

Defects in Ion Implantation and Annealing Studied by Atomistic Model

Simulation On Low Energy Ion Implantation Into Ge And Sige With Molecular Dynamics Method

Quantitative simulation of ion-beam induced deposition of nanostructures

Role of electronic energy loss on defect production and interface stability: Comparison between ceramic materials and high-entropy alloys

Quantum theory of electronic excitation and sputtering by transmission electron microscopy

Effect of substrate bias on microstructure of epitaxial film grown by HiPIMS: An atomistic simulation

The role of ionization fraction on the surface roughness, density and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering and HiPIMS: An atomistic simulation

Nanostructure evolution and surface modification mechanism of Cr ion-implanted single-crystal iron: insights from molecular dynamics simulations

Atomistic simulation of displacement damage and effective nonionizing energy loss in InAs

Fully discrete model of kinetic ion-induced electron emission from metal surfaces

Simulations of energetic beam deposition: From picoseconds to seconds

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

A Quantitative Analysis of an in Situ Xe Ion Implantation Experiment on Single Crystal Molybdenum Via a Molecular Dynamics Informed Kinetic Rate Theory Simulation

Equilibrium ion distribution in the presence of clearing electrodes and its influence on electron dynamics