Quantitative simulation of ion-beam induced deposition of nanostructures

Christoph Ebm,Gerhard Hobler,Simon Waid,Heinz D. Wanzenboeck
DOI: https://doi.org/10.1116/1.3533951
2011-01-01
Abstract:Gas-assisted etching and deposition with focused ion beams are unique and flexible methods for the fabrication of nanostructures. To understand and improve these processes the ability to accurately simulate and predict the resulting structures is very important. In this paper we present a nonlocal recoil-based algorithm for topography simulation of ion-beam induced gas-assisted deposition. We have fabricated flying roof like overhanging structures and found very good agreement between simulation and experiment. These structures cannot be explained with a local model. Furthermore, we demonstrate a considerable influence of the beam diameter on the resulting structure by comparing otherwise identical simulations with different beam diameter.
engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
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