Abstract:An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1−xCdxO and Zn1−yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500°C were of an acceptable crystallinity with (002) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08×10–3Ωcm at an optimal Al content of 4at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8Ωcm, Hall mobility of 2.28cm2V−1s−1, and hole concentration of 3.76×1016cm−3, as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1−xCdxO and Zn1−yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1−xCdxO (x=0.06), 3.28eV for ZnO, and 3.56eV for Zn1−yMgyO (y=0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD.

ZnO Film Growth and the Fabrication of ZnO-Based Thin Film Transistors

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

Zno-based Thin Films Synthesized by Atmospheric Pressure Mist Chemical Vapor Deposition

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Study of zinc tin oxide thin-film transistor

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

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Synthesis of ZnO Nanowires for Thin Film Network Transistors

Electrochemical Deposition and Characterization of Wide Band Semiconductor ZnO Thin Film

Solution-processed zinc oxide thin films and top-gate thin film transistors

Fabrication and performance of indium oxide based transparent thin film transistors

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Growth of Cubic MgxZn1-xO Films and Characterization

Structural, optical and electrical properties of ZnO thin films prepared by reactive deposition

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors