Surface Morphology of Nitrogen Doped Tetrahedral Amorphous Carbon Films on Silicon by Atomic Microscopy Imaging

ZY Chen,YH Hu,JP Zhao,X Wang,SQ Yang,TS Shi,XH Liu,EZ Lou,JB Xu,IH Wilson
DOI: https://doi.org/10.1016/s0167-577x(97)00129-8
IF: 3
1998-01-01
Materials Letters
Abstract:The results of studies of the surface morphology of nitrogen doped tetrahedral amorphous carbon (ta-C) films with atomic force microscopy (AFM) are reported. The films were prepared by filtered arc deposition (FAD). N is introduced into the films during growth by injecting N2 gas into a plasma stream formed by a carbon cathode vacuum arc. AFM revealed that the surface on formed films is uniform and smooth on the nanometerscale and the root-mean-square roughness of the films surface is calculated to be approximately 0.23–0.26 nm. The influence of N doping on the surface morphologies of ta-C films are discussed.
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