Abstract:The InGaZnO thin film transistor (IGZO TFT) backplane combined with Cu interconnection has nearly an order of magnitude lower in the ability to withstand voltage than that of traditional a-Si TFT backplane on the production line. The breakdown voltage of Mo/Cu interconnection between data line and gate line is only about 60% of that of traditional a-Si TFT backplane. The electrostatic discharge (ESD) breakdown of Mo/Cu:SiNx/SiO2:Mo/Cu structure has become an important factor affecting the normal display of IGZO TFT ultra high definition (UHD) panel. We find that the anti-ESD damage ability of IGZO TFT devices needs matching with the anti-ESD damage ability of interlayer Cu interconnection in order to achieve a high-robustness IGZO TFT backplane. The position of ESD damage in IGZO TFT backplane is commonly in the climbing place where the data line crosses the scanning line. In this paper, a Cu diffusion model is proposed to explain the mechanism for the ESD failure of interlayer Cu interconnection. The Cu metal in gate line diffuses into SiNx/SiO2 gate insulator, and Cu metal at the corner of data line, where the date line crosses the gate line, diffuses into SiO2 film on the date line. The selection conditions of three kinds of protection architectures for ESD protection circuits around Cu interconnection, i.e. R-type, R-half-type, and Diode-type protection architectures, are proposed. On the basis of process optimization such as Cu metal film forming and Cu metal interface treatment, an ESD protection method for the Cu interconnection periphery of IGZO TFT backplane with high robustness is proposed. For the stable production process of IGZO TFT, combined with the design window of ESD protection circuit, the peripheral ESD protection circuit of Cu interconnect is designed with diode-type protection circuit on the IGZO TFT backplane of large-sized UHD and QUHD panel, which effectively improves the effect of interlayer Cu interconnection of IGZO TFT backplane on ESD damage. Through the production verification, it is proved that the metal diffusion of Cu interconnection on IGZO TFT backplane is the fundamental reason for reducing the anti-ESD damage ability of Mo/Cu:SiNx/SiO2:Mo/Cu structure. The rationality of the proposed ESD damage model for interlayer Cu interconnection is verified, which provides a theoretical basis for subsequent IGZO TFT backplane design with high robustness.

Half-Buried Structure Cu Bus Line in TFT LCD

Development Of Fine Line Build-Up Organic Substrate Using Thin Film Rdl Technology

Improved Performance of the Amorphous Indium-Gallium-zinc Oxide Thin Film Transistor with Cu-Mo Source/drain Electrode

Investigation on Chemical Etching Process of FPCB With 18 μ m Line Pitch

P‐6.5: Cu Erosion of Via Hole Within GOA Unit of Super‐large and Ultra‐HD TFT‐LCD of 120hz Frame Rate

A Novel Active Matrix For Lcd: Diode Array In Polymer

Electro-static Discharge Protection Analysis and Design Optimization of Interlayer Cu Interconnection in InGaZnO Thin Film Transistor Backplane

Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

High-Performance and Operationally Stable Organic Thin-Film Transistors Using Bi-Buffer Layers with Low-Cost Electrodes

P‐11: High Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD

Low sheet resistance buried metal bit line realized by high temperature metal CVD process in vertical channel transistor array

High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum

Letter: A low-cost low-temperature thin-film-transistor backplane based on oxide semiconductor

Flexible TFT backplane development for extremely small bending radius with organic ILD and novel TFT structures

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

Advanced hybrid process with back contact IGZO‐TFT

P-28: Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure