Abstract:This work examines Cu(In,Ga)Se2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Structural and Electrical Properties of Co-Evaporated In, Garich Cigs Thin Films

Evolution of (in,ga)2se3 -Cu Rich -In(ga) Rich of CIGS Thin Films

Properties Of One-Step Electrodeposited Cu(In1-X9 Ga-X)Se-2 Thin Films

Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Cu(In, Ga)Se 2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties Versus Composition

Growth of CIS Thin Films by Selenization of Co-evaporated Cu-In Alloy

The Effect of Composition on Structural and Electronic Properties in Polycrystalline Cugase2 Thin Film

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Structural, optical and electrical properties of low-temperature deposition Cu(In xGa 1-x)Se 2 thin films

Microstructural Characterization of Cu-poor Cu (in, Ga)Se2 Surface Layer

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

The Phase Transformation of Cu(In,Ga)Se-2 Film Prepared by Three-Stage Process of Co-Evaporation

Triangle islands and cavities on the surface of evaporated Cu(In, Ga)Se 2 absorber layer

STUDY OF THREE-STAGE CO-EVAPORATION PROCESS OF Cu(In,Ga)Se2 FILMS FOR THE INTEGRATED MODULE APPLICATION

Phase Transformation of CIGS Film Prepared by Co-evaporation "Three-Stage Process"

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Annealing Effects On The Structure Properties Of Cu(In,Ga)Se-2 Thin Films

Structures, Optical Absorption and Electrical Properties of Pulsed-Laser-Deposited Cuin0.8ga0.2se2 Thin Films and Their Use in Cigs/Pcbm Photovoltaic Structures

Characterization of Structure and Physical Properties of CuInSe2 Films Prepared from Chlorides under Different Conditions

Properties of CIGS Thin-Films Prepared by a Three-Stage of Co-Evaporation Process