Abstract:Fabricating chalcopyrite Cu(In,Ga)Se2 (CIGS) films from electrodeposition is one of the most effective ways to lower the production cost and energy consumption compared with that from vacuum methods. However, this process often produces a pronounced rough surface with impurity phases, induces the accumulation of gallium, and results in a low surface band gap. In this work, ammonium sulfide ((NH4)2S, AS) solution treatment is used as a single way to realize the optimization of the distribution of elements on the CIGS surface. It is revealed that this room-temperature process not only significantly reduces the surface roughness (Ra) but also incorporates sulfur (S) into the CIGS film successfully. An appropriate AS treatment duration can effectively remove the impurity phases and reduce the series resistance, and thus the dominant recombination moves from the CdS/CIGS heterojunction interface to the bulk. Consequently, the open-circuit voltage (VOC) and fill factor (FF) of solar cells have been greatly improved (from 484 to 532 mV, from 62.52 to 68.15%), leading to higher efficiency of 11.92%. This work focuses on revealing the etching mechanism of the CIGS films by the AS treatment at room temperature.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.1c00220?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.1c00220</a>.Best solar cell parameters of different unannealing samples (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.1c00220/suppl_file/ae1c00220_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Structural, optical and electrical properties of low-temperature deposition Cu(In xGa 1-x)Se 2 thin films

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Synthesis and Characterization of CIGS Powder

Structures, Optical Absorption and Electrical Properties of Pulsed-Laser-Deposited Cuin0.8ga0.2se2 Thin Films and Their Use in Cigs/Pcbm Photovoltaic Structures

Optimization of the substrate temperature of narrow bandgap CIS solar cells by three stage coevaporation process

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Effect of Substrate Temperature on CIGS Thin Films Prepared by Quarternary Laminating Selenization Proces

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Enhancing Surface Properties for Electrodeposited Cu(In,Ga)Se 2 Films by (NH 4 ) 2 S Solution at Room Temperature

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

The Effect of Substrate Temperatures on CdS Film Prepared by Thermal Evaporation

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target