Abstract:Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical proper-ties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope (XRD) and x-ray fluorescence (XRF). A two-phase region is composed of CuGaSe2 and CU2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope (SEM) for various compositional films, the grain sizes of the CuGaSe(2)films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass (AM)1.5 spectrum for 100 mW/cm(2) at room temperature (aperture area, 0.24 cm(2)). The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.

Evolution of (in,ga)2se3 -Cu Rich -In(ga) Rich of CIGS Thin Films

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Structural and Electrical Properties of Co-Evaporated In, Garich Cigs Thin Films

The Phase Transformation of Cu(In,Ga)Se-2 Film Prepared by Three-Stage Process of Co-Evaporation

Phase Transformation of CIGS Film Prepared by Co-evaporation "Three-Stage Process"

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Properties Of One-Step Electrodeposited Cu(In1-X9 Ga-X)Se-2 Thin Films

Microstructural Characterization of Cu-poor Cu (in, Ga)Se2 Surface Layer

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Growth of CIS Thin Films by Selenization of Co-evaporated Cu-In Alloy

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Structural, optical and electrical properties of low-temperature deposition Cu(In xGa 1-x)Se 2 thin films

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Comparison of the Compositions and Structures of Electrodeposited Cu-Poor and Cu-Rich Cu(In1-Xgax)Se-2 Films Before and after Selenization

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Preparation of Polycrystalline Cu(In,Ga)Se_2 Thin Film with Nano-metal Oxide:the Chemical Reaction Process and Its Properties

A New Simple Route to Grow Cu(In,Ga)Se2 Thin Films with Large Grains in the Co-Evaporation Process

The Effect of Composition on Structural and Electronic Properties in Polycrystalline Cugase2 Thin Film

Cu(In, Ga)Se 2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties Versus Composition

Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process