Ultraviolet-infrared Femtosecond Laser-Induced Damage in Fused Silica Andcaf2crystals

TQ Jia,HX Chen,M Huang,FL Zhao,XX Li,SZ Xu,HY Sun,DH Feng,CB Li,XF Wang,RX Li,ZZ Xu,XK He,H Kuroda
DOI: https://doi.org/10.1103/physrevb.73.054105
2006-01-01
Abstract:The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800 <lambda < 2000 nm. The ultrafast electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band (sub-CB) transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.
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