Modeling of SiC MESFETs by Using Support Vector Machine Regression

Y. Xu,Y. Guo,R. Xu,Y. Wu
DOI: https://doi.org/10.1163/156939307782000361
2012-01-01
Journal of Electromagnetic Waves and Applications
Abstract:In this paper, a support vector machine (SVM) regression approach is introduced for modeling of field effect transistors (FETs). Benefits to the good generalization ability of SVM, a SVM regression (SVR) model is established using a set of training and testing data, which is produced by simulation using an available empirical model of SiC MESFETs. Experimental results show the SVR model has good ability in predicting electrical performance of FETs.
What problem does this paper attempt to address?