Study on the mechanism of aluminum nitride synthesis by chemical vapor deposition

Chunzhong Li,Liming Hu,Weikang Yuan,Minheng Chen
DOI: https://doi.org/10.1016/S0254-0584(97)80064-8
IF: 4.778
1997-01-01
Materials Chemistry and Physics
Abstract:Ultrafine aluminum nitride particles were synthesized by chemical vapor deposition at 973–1273 K. Effects of reaction temperature, gas total flow rate, aluminum chloride concentration on aluminum nitride particle morphology and particle size distribution were studied. The mechanism of the reaction between aluminum chloride and ammonia and the mechanisms for homogeneous formation of aluminum nitride particles and growth of aluminum nitride film by surface reactions were investigated.
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