Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Changcheng Hu,Huiqi Ye,Gang Wang,Haitao Tian,Wenxin Wang,Wenquan Wang,Baoli Liu,Xavier Marie
DOI: https://doi.org/10.1186/1556-276X-6-149
2011-01-01
Nanoscale Research Letters
Abstract:Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D s .
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