Abstract:Although surface plasmon (SP) coupling has been widely used for enhancing the emission efficiency of an InGaN/GaN quantum well (QW) structure, the interplay of the carrier transport behavior in the QW with SP coupling, which is a crucial mechanism controlling the SP-coupling induced QW emission enhancement, is still an issue not well explored yet. To understand the effects of SP coupling on the radiative and non-radiative recombination behaviors of carriers in a QW structure, the temperature-dependent time-resolved photoluminescence spectroscopies of two QW samples of different indium contents with surface Ag nanoparticles are studied. A two-single-exponential model is used for calibrating their radiative and non-radiative decay times. The SP coupling process, which transfers carrier energy from a QW into the SP resonance mode for effective radiation and increases the effective radiative recombination rate, produces energy-dependent carrier depletion and, hence, disturbs the quasi-equilibrium condition of carrier distribution. In this situation, a strong carrier transport process occurs targeting a new quasi-equilibrium condition that enhances non-radiative recombination and, hence, reduces the benefit of using the SP coupling technique. To alleviate this problem of SP-coupling induced energy loss, a weak energy-dependent or broad-spectrum SP coupling process is recommended.

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Ultrafast Carrier Dynamics in Multiple Quantum Well P-I-N Photodiodes

Linear and Nonlinear Intersubband Optical Properties in A Step Quantum Well with an Applied Electric Field

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Phonon Emission by Photoexcited Carriers in InGaN/GaN Multiple Quantum Wells

Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects

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Selectively Excited Photoluminescence of GaAs1−xSbx/GaAs Single Quantum Wells

Drift mobility of long-living excitons in coupled GaAs quantum wells

Influence of Applied Electric Field on the Absorption Coefficient and Subband Distances in Asymmetrical AlN/GaN Coupled Double Quantum Wells

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Hot Carrier Relaxation Processes in GaAs-GaAlAs Multiple Quantum Well Structures

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Carrier recombination dynamics in InGaN/GaN multiple quantum wells