Abstract:SiC substrates have outstanding advantages over traditional materials in power device application, and are mainly prepared by a physical vapor transport method (PVT). Whether the PVT furnace works by resistance heating or induction heating, both face the problem of the deterioration of growth conditions during a long-term process. The relative position of the thermal field directly affects the crystal growth conditions, but the law of specific influence and the change in physical environment inside the thermal field have not been made sufficiently clear and lack systematic research. Therefore, SiC single crystal growth, with different directions and rates in the direction of movement of the heating module, was modeled using a simulation method, and the law of variation of the physical field, including heat flux, temperature, powder porosity and growth rate parameters under different schemes, was analyzed. The study indicates that the decay of raw materials is the primary reason why growth conditions cannot be maintained. The results verified that different coils' modes of movement have different effects on the improvement or adjustment of SiC crystals' growth conditions. Under the same temperature control conditions, the coils' movement rates of 200 μm/h, 0, -200 μm/h and -400 μm/h correspond to the average growth rates of 140, 152, 165 and 172 μm/h, respectively. The results show that downward displacement of the coils is beneficial in compensating for the deterioration of growth conditions, but it is easier to form convex surfaces and is not conducive to expanding diameter growth. This also verifies that the desired crystal growth state can be obtained by adjusting the position of the thermal field.

Effects of Different Height and Space of a Multi-turn Inductive Coil on Temperature Distribution in the Large-size 6H-Sic Growth System

Effect of Different Coupling Widths on Induction Heating in the Large Size SiC Growth System

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Numerical Investigation of Induction Heating and Heat Transfer in A Sic Growth System

Numerical design of induction heating in the PVT growth of SiC crystal

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique

Analysis and Design of Temperature Field of SiCGe Alloy Growth by Hot-wall Chemical Vapor Deposition on SiC Substrates

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method Via Simulations

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Numerical Simulation of SiC Crystal Growth During Physical Vapour Transport Using the Lattice Boltzmann - Phase Field Model

Finite Element Analysis of the Temperature Field in A Vertical Mocvd Reactor by Induction Heating

Effects of the Porosity of the Source Materials on the Initial Growth of 6H-Sic Crystal

Theoretical analysis of induction heating in high-temperature epitaxial growth system

Hot-zone design and optimization of resistive heater for SiC single crystal growth

Temperature Field Optimization and Polytype Control in the Growth of 6H-Sic Single Crystal

Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT

The Effect of the Crucible on the Temperature Distribution for the Growth of a Large Size AlN Single Crystal

Numerical Simulation of a New SiC Growth System by the Dual-Directional Sublimation Method