Improving the Electrical Conductivity of Cucro2 Thin Film by N Doping

Guobo Dong,Ming Zhang,Xueping Zhao,Hui Yan,Chunyu Tian,Yonggang Ren
DOI: https://doi.org/10.1016/j.apsusc.2010.01.094
IF: 6.7
2010-01-01
Applied Surface Science
Abstract:N-doped CuCrO2 thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO2 thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17Scm−1 is achieved for the film deposited with 30vol.% N2O, which is about three orders of magnitude higher than that of the undoped CuCrO2 thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO2 thin films increase due to the Burstein–Moss shift.
What problem does this paper attempt to address?