Abstract:High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have made significant progress as amorphous silicon replacements for electronics and commercial displays. On the other hand, developing metal oxide transistors with low processing temperatures remains a difficulty. The hightemperature annealing process causes very instability in the plastic substrate. Here, we introduce IGZO TFTs that shows enhanced electrical properties environmental stability by laser post-annealing. After annealing process, the laser post-annealing process was given at 80 MHz, pulse width 140 fs, for 50 seconds. The improved electrical characteristics of this laser post-annealed IGZO TFTs were: 9.03 cm 2 /Vs; 2.2×10 7 on/off current ratio. The IGZO TFT to which laser post-annealing was applied had a flat surface, and it was confirmed that the combination of internal metal and oxygen was urged, and the leakage current problem was improved by suppressing excessive generation of oxygen vacancy. Furthermore, the voltage transfer curve was measured after fabricating the N-MOS logic inverter circuit, this inverter showed a value of 80.8% the total noise margin.

Improvement of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers by Post-Oxidation Annealing

InGaAs/GaAs VCSEL Fabricated by Selective Oxidation

Output Power Improvements of Antimonide Quantum Well Laser Diodes by Rapid Thermal Annealing on the Cavity Coating Films

Improvement of mid-wave infrared quantum cascade laser epitaxy by studying the effect of thermal annealing on GaInAs/AlInAs superlattice

Lateral Oxidation in Vertical Cavity Surface Emitting Lasers

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

Optimization of Annealing Process for Improved InGaN Solar Cell Performance

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

Ion implantation in 1.3μm VCSEL structure

Effect of Rapid Thermal Annealing on Electron Emission and DX Centers in Strained InGaAs/GaAs Single Quantum Well Laser Diodes

Low Temperature Au-In-Au Metallic Bonding and Its Application in the Fabrication of Vcsels

Ohmic Contacts Technology in Long-wavelength VCSEL Structure

Enhancement of the Conversion Efficiency of Selective Emitter PERC Solar Cells by Post-Oxidation

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Improvement of the Oxidation Interface in an AlGaAs/AlxOy Waveguide Structure by Using a GaAs/AlAs Superlattice

Improved performances of 850 nm vertical cavity surface emitting lasers utilizing the self-planar mesa structure

850nm Vertical Cavity Surface Emitting Lasers Utilizing The Self-Planar Mesa Structure

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application

Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing