Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Localized Vibrational Mode Infrared Absorption of BH Pair in Silicon

INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

Infrared Spectra of Silicon Nanowires

Isotope Frequency Shifts of BH Local Pair Modes in Crystalline Silicon

Doping dependence of boron–hydrogen dynamics in crystalline silicon

Far-infrared properties of helium-doped silicon

Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

Effect of Hydrogen Treatment Upon Silicon Surface Investigated with the Multiple Internal Reflection Infrared Spectroscopy

The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

Time Evolution of the Localized Vibrational Mode Infrared Absorption of Porous Silicon in Air

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Study on the infrared absorption of nitrogen-oxygen complex in silicon

Characterization of Hydrogenated Amorphous Boron by A Combination of Infrared Absorption Spectroscopy and Thermal Analyses

Insights into the Nature of SiH4−BH3Complex: Theoretical Investigation of New Mechanistic Pathways Involving SiH3•and BH4•Radicals

Iron-boron Pair Dissociation in Silicon under Strong Illumination

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

High-Resolution Spectroscopic Study of the Local Mode Vibrational-States of Silane

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon