Time Evolution of the Localized Vibrational Mode Infrared Absorption of Porous Silicon in Air

WX ZHU,YX GAO,LZ ZHANG,JC MAO,BR ZHANG,JQ DUAN,GG QIN

DOI: https://doi.org/10.1016/0749-6036(92)90292-d

IF: 3.22

1992-01-01

Superlattices and Microstructures

Abstract:We have fabricated porous silicon layers (PSLs), referred to as PSL1 and PSL2, using two kinds of anodizing solutions which have been extensively used in the literature, i.e. HF(48 wt. %) : H2O = 1:1 and HF(48 wt. %) : C2H5OH = 1:1, respectively. We observed infrared absorption of the localized vibrational modes on the inner walls of the samples after exposure to air for 2h, 6 days, 1 month and 4 months after manufacture by Fourier-transform infrared (FTIR) spectroscopy. For both PSL1 and PSL2, there is a change in intensity for the IR bands with time. The 627 cm−1 (SiH2 deformation mode), 667 cm−1 (SiH deformation mode), 907 cm−1 (SiH scissor mode), 914 cm−1 (SiF stretching mode), 2092 cm−1 (SiH stretching mode), 2116 cm−1 (SiH2 stretching mode), and 2140 cm−1 (possibly SiH3 stretching mode) band all decrease. The intensity of the 1056 cm−1 (SiOSi stretching mode) band instead increases with the time of exposure. For PSL2, the time evolution of the IR band intensity is slower than that for PSL1. Two bands, located at 2199 and 2250 cm−1, appeared after 6 days exposure to air and rose in intensity with time, showing that they are related to oxygen.